The 2004 47th Midwest Symposium on Circuits and Systems, 2004. MWSCAS '04.
DOI: 10.1109/mwscas.2004.1354276
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A simple method based on AM-AM, AM-PM measurements and CDMA signal statistics for RF power amplifier characterization

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Cited by 2 publications
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“…Additionally, in the case of passive Device Under Test (DUT) on GaN, capable of high-power handling, very high input power levels are required to drive the device into its non-linear region. Most literature has focused on AM/AM and AM/PM characterization of power amplifiers (PAs), as discussed in [28,29,[31][32][33][34][35][36][37][38]. However, only a few articles deal with AM/AM characterization, and even fewer deal with AM/PM characterization of passive circuits.…”
Section: Introductionmentioning
confidence: 99%
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“…Additionally, in the case of passive Device Under Test (DUT) on GaN, capable of high-power handling, very high input power levels are required to drive the device into its non-linear region. Most literature has focused on AM/AM and AM/PM characterization of power amplifiers (PAs), as discussed in [28,29,[31][32][33][34][35][36][37][38]. However, only a few articles deal with AM/AM characterization, and even fewer deal with AM/PM characterization of passive circuits.…”
Section: Introductionmentioning
confidence: 99%
“…Some examples are presented in [39][40][41][42][43][44][45] and [39,46,47], respectively. Specialized test benches have been developed and somehow exploited for amplifiers [28,[31][32][33][34][35][36][37]48,49], but not for passive circuits. No reported works explicitly focus on AM/PM characterization of PAS GaN HEMT circuits at such high input power (37 dBm) and frequency ranges (Ku Band, 12 GHz to 18 GHz).…”
Section: Introductionmentioning
confidence: 99%