A simple ionizing radiation spectrometer/dosimeter based on radiation sensing field effect transistors (RadFETs)

Moreno, Daniel; Hughes, R. C.; Jenkins, Mark W.; Drumm, Clifton Russell

doi:10.1109/sensor.1997.635470

Cited by 7 publications

(4 citation statements)

References 3 publications

(2 reference statements)

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“…This creates an irreversible shift in the FET's threshold voltage. Sandia has microfabricated miniature RadFETs [ 17 ]. Sensitivities depend in part upon fabrication structure and range from 0.01 to 5 mV per rad.…”

Section: Sensor Technologies For Environmental Monitoringmentioning

confidence: 99%

Overview of Sensors and Needs for Environmental Monitoring

Robinson

Miller

et al. 2005

Sensors

214

110

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This paper surveys the needs associated with environmental monitoring and longterm environmental stewardship. Emerging sensor technologies are reviewed to identify compatible technologies for various environmental monitoring applications. The contaminants that are considered in this report are grouped into the following categories: (1) metals, (2) radioisotopes, (3) volatile organic compounds, and (4) biological contaminants. United States regulatory drivers are evaluated for different applications (e.g., drinking water, storm water, pretreatment, and air emissions), and sensor requirements are derived from these regulatory metrics. Sensor capabilities are then summarized according to contaminant type, and the applicability of the different sensors to various environmental monitoring applications is discussed.

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Section: Sensor Technologies For Environmental Monitoringmentioning

confidence: 99%

Overview of Sensors and Needs for Environmental Monitoring

Robinson

Miller

et al. 2005

Sensors

214

110

View full text Add to dashboard Cite

show abstract

“…This creates an irreversible shift in the FET's threshold voltage. Sandia has microfabricated miniature RadFETs (Moreno, 1997). Sensitivities depend in part upon fabrication structure, and range from 0.01 to 5 mV per rad.…”

Section: Radfet (Radiation-field Effect Transistor)mentioning

confidence: 99%

Sensors for environmental monitoring and long-term environmental stewardship.

Miller¹,

Robinson²,

Ho³

et al. 2004

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This report surveys the needs associated with environmental monitoring and long-term environmental stewardship. Emerging sensor technologies are reviewed to identify compatible technologies for various environmental monitoring applications. The contaminants that are considered in this report are grouped into the following categories: (1) metals, (2) radioisotopes, (3) volatile organic compounds, and (4) biological contaminants. Regulatory drivers are evaluated for different applications (e.g., drinking water, storm water, pretreatment, and air emissions), and sensor requirements are derived from these regulatory metrics. Sensor capabilities are then summarized according to contaminant type, and the applicability of the different sensors to various environmental monitoring applications is discussed.

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“…The influence of ionizing radiation (electrons, X-rays, γ-rays, protons and heavy ions) on devices based on the metal-insulator-semiconductor structures (MIS-capacitors and field-effect transistors called as MISFETs) are being studied since 1960' years (e.g., [1,2]). It was found that the general dose radiation effect is the irreversible change during irradiation of effective charge Qe, summarized effective charges Qt in an insulator and Qs in insulator-semiconductor interface [3,4]. This effect results in the deformations of MIS-capacitors' C-V characteristics and MISFETs' I-V characteristics (CVC), what are physical basics of the MIS-based dosimeters of ionizing radiation.…”

Section: Introductionmentioning

confidence: 99%

“…MISFET-based sensors of the total ionizing dose D (TID) have been studied by many investigators [4][5][6][7][8]. Found that radiation sensitivity of sensors depend on electrical modes, structural and technological parameters of MISFET.…”

Section: Introductionmentioning

confidence: 99%

Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors

et al. 2018

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The temperature and electrical modes influences on radiation sensitivity of n-channel MISFETs sensors of the total ionizing dose were investigated. There were measured the MISFET-based dosimeter output voltages V as function of the radiation doses D at const values of the drain current ID and the drain–source voltage VD, as well as the (ID–VG) characteristics before, during and after irradiations at different temperatures T (VG is the gate voltage). It was shown how the conversion function V(D) and the radiation sensitivity SD are depending on the temperature T for different electrical modes. To interpret experimental data there were proposed the models taking into account the separate contributions of charges in the dielectric Qt and in SiO2–Si interface Qs. The model’s parameters ΔVt(D,T) and ΔVs(D,T) were calculated using the experimental ID–VG characteristics. These models can be used to predict performances of MISFET-based devices.

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A simple ionizing radiation spectrometer/dosimeter based on radiation sensing field effect transistors (RadFETs)

Abstract: SummaryThis paper reports on the processing steps in a silicon foundry leading to improved performance of the Radiation Sensing Field Effect Transistor @&ET) and the use of multiple RadFETs in a handheld, battery operated, combination spectrometer/dosimeter.

Cited by 7 publications

References 3 publications

Overview of Sensors and Needs for Environmental Monitoring

Overview of Sensors and Needs for Environmental Monitoring

Sensors for environmental monitoring and long-term environmental stewardship.

Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors

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