A simple electrical method for etch bias and process reliability determination

A concept of a multilink test scheme with a two-step probability plot and its statistical accuracy of estimation are investigated for the timedependent dielectric breakdown under defect clustering condition in the back end of line and middle of line. It is useful for obtaining an accurate estimation of lifetime that explains a complicated distribution shape due to impacts of clustered defects. Furthermore, applying a regression of the electric field dependence of breakdown to the lifetime distribution analysis will provide a more accurate estimation.

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“…By using ¼ 0:71, the other parameters can be estimated by the multiple linear regression analysis using Eq. (8). As shown in Fig.…”

Section: Analysis Of Electric Field Dependence Datamentioning

confidence: 82%

Statistical evaluation method for lifetime distribution in field-accelerated time-dependent dielectric breakdown using two-step probability plot and multilink test scheme

Tate

Yokogawa

2018

Jpn. J. Appl. Phys.

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“…In advanced semiconductor technologies, the impact of process variations such as line-edge roughness in etching processes, deviation in lithography alignment, variations in Via and contact diameter, and unevenness in film thickness between the wiring/gate and Via have large effects on lifetime variations. 21,[34][35][36][37][38][39] Because of these fluctuations, the observed lifetime distribution of the TDDB does not follow the commonly used Weibull distribution approach. In this case, the probability plot shows a convex upward shape.…”

Section: Break Of the Uniformity Assumptionmentioning

confidence: 99%

Applications of lifetime distribution functions with two shape parameters for reliability analysis in advanced interconnect technologies: a brief review

Yokogawa¹

2020

Jpn. J. Appl. Phys.

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In this brief review, applications of lifetime distribution functions with two shape parameters for reliability analysis are introduced in advanced interconnect technologies. For the time-dependent dielectric breakdown analysis, the time-dependent clustering model is applied. Suppressing the trade-off between two shape parameters is required for an accurate estimation of the clustering parameter. Some statistical techniques, including the sudden-death test structure and the Bayesian inference, are reviewed. For simple electromigration evaluation on a chip-level, an adaption of the generalized Gamma distribution is proposed. The impacts of the circuit scale and the segment variations are investigated with the Monte-Carlo technique. This review suggests that variation control will become ever more important for advanced interconnect technology developments.

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“…This situation may change somewhat, however, if metal trench capping approaches are used, but without a secondary dielectric capping layer. (5) Vias tend to form distended regions around the top of the via at the trench/capping layer interface that arise from taper effects and via misalignment [242]. (4) Line terminations [239,240] and turns within interconnect layouts have particularly high local fields due to electric field enhancement at corners [26,27,241].…”

Section: Interconnect Layout and Test Structuresmentioning

confidence: 99%