A Simple Diode Parametric Amplifier Design for Use at S, C, and X Band

Aitchison, C.S.; Davies, R.; Gibson, P. J.

doi:10.1109/tmtt.1967.1126364

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1970

2014

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Cited by 20 publications

(2 citation statements)

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“…Early interest focused on telecommunications [13][14][15] and radio astronomy [16,17]. However, despite efforts to increase operating frequencies and bandwidth, the parametric amplifier was displaced by the travelling wave tube.…”

Section: Introductionmentioning

confidence: 99%

Parametric Amplification of Magnetic Resonance Images

et al. 2012

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Section: Introductionmentioning

confidence: 99%

Parametric Amplification of Magnetic Resonance Images

et al. 2012

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“…In addition, the bandwidth of the diode parametric amplifier [3] and the tuning range of the Neton and Gough oscillator [4] can also be further improved by using the reactance compensation technique. To achieve high efficiency and broad bandwidth, a two-stage fully integrated class-E PA with the reactance compensation technique is proposed using a monolithic microwave integrated circuit (MMIC) technology in this letter.…”

Section: Introductionmentioning

confidence: 99%

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Lin

Chang

2010

IEEE Microw. Wireless Compon. Lett.

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This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P 1 dB ) of higher than 27 dBm. Index Terms-Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT), high efficiency, power amplifier (PA), reactance compensation.

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