A simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures

Zhao, Ying; Jensen, Chris; Chuang, Ricky W.; Lee, H.P.; Dong, Zihan; Shih, Robert

doi:10.1109/55.841299

Cited by 7 publications

(6 citation statements)

References 7 publications

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“…Figure 6 shows the EL images of 1 cm × 1 cm large-area LEDs fabricated with AgNW TCEs (at 50 mA). The devices were simply fabricated using a quick-test structure 74 and indium as both the n - and p -contacts. The LEDs showed bright light emission across the entire active region, suggesting that the large-area LEDs could be fabricated using efficient AgNW spreading contact.…”

Section: Discussionmentioning

confidence: 99%

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Jin

Jeong

et al. 2015

Sci Rep

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Silver nanowires (AgNWs) have been successfully demonstrated to function as next-generation transparent conductive electrodes (TCEs) in organic semiconductor devices owing to their figures of merit, including high optical transmittance, low sheet resistance, flexibility, and low-cost processing. In this article, high-quality, solution-processed AgNWs with an excellent optical transmittance of 96.5% at 450 nm and a low sheet resistance of 11.7 Ω/sq were demonstrated as TCEs in inorganic III-nitride LEDs. The transmission line model applied to the AgNW contact to p-GaN showed that near ohmic contact with a specific contact resistance of ~10−3 Ωcm2 was obtained. The contact resistance had a strong bias-voltage (or current-density) dependence: namely, field-enhanced ohmic contact. LEDs fabricated with AgNW electrodes exhibited a 56% reduction in series resistance, 56.5% brighter output power, a 67.5% reduction in efficiency droop, and a approximately 30% longer current spreading length compared to LEDs fabricated with reference TCEs. In addition to the cost reduction, the observed improvements in device performance suggest that the AgNWs are promising for application as next-generation TCEs, to realise brighter, larger-area, cost-competitive inorganic III-nitride light emitters.

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Section: Discussionmentioning

confidence: 99%

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Jin

Jeong

et al. 2015

Sci Rep

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“…9 The contact probe apparatus is shown schematically in Fig. 9 The contact probe apparatus is shown schematically in Fig.…”

Section: W So and H Liumentioning

confidence: 99%

“…9 The contact probe apparatus is shown schematically in Fig. 9 Using this arrangement, I -V data were collected from multiple devices on the same wafers with an HP 4145 semiconductor parameter analyzer. It consists of three spring-loaded probes with about 1 mm spacing between each.…”

Section: W So and H Liumentioning

confidence: 99%

Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag

Hibbard

Jung

Wang

et al. 2003

Applied Physics Letters

123

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We report on a high reflectance low resistance multilayer contact to p-GaN composed of a thin oxidized Ni/Au bilayer overcoated with a thick Al or Ag layer and then capped by Ni/Au. Measurements on 500 μm diameter light emitting diode-like test structures show an operating voltage below 4 V at 20 mA that is comparable to identical devices fabricated with a conventional Ni/Au contact. Back surface light emission is about 70% greater than that from devices with the Ni/Au contact due to lower light absorption by the Al or Ag. Performance for both Al and Ag based contacts is stable at temperatures of up to around 100 °C.

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“…The electrical behavior of the contact is evaluated using a wafer-level probing technique that does not require full fabrication of the LED [12]. In this method, localized damage is first made by applying a high voltage (70-80 V) between two sharp probes (2 and 3).…”

Section: Resultsmentioning

confidence: 99%

High transparency low resistance oxidized Ni/Au–ZnO contacts to p-GaN for high performance LED applications

Jung¹,

Lin²,

Chan³

et al. 2004

phys. stat. sol. (a)

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This paper presents high-transparency low-resistance contact on p-GaN using oxidized Ni/AuZnO : Al 2 O 3 (2 wt%) for high-performance GaN-based light-emitting diodes (LEDs) applications. It is shown that oxidized Ni/Au -ZnO contact to p-GaN yields an operating voltage of around 4.7 V at 20 mA compared to 4.1 V of a reference oxidized Ni/Au(5 nm/5 nm) -Ni/Au(20 nm/120 nm) sample without the ZnO : Al 2 O 3 (2 wt%) layer. Enhancement of transmittance of about 60% at the wavelength of 450 nm over a conventional N 2 -annealed semi-transparent Ni/Au(5 nm/5 nm) contact is measured on glass substrates.

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A simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures

Cited by 7 publications

References 7 publications

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag

High transparency low resistance oxidized Ni/Au–ZnO contacts to p-GaN for high performance LED applications

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