A silicon quasi‐DOS based on reverse‐biased pn diode

Zhao, Yue; Shao, Haifeng; Hu, Ting; Yu, Ping; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

doi:10.1002/mop.26618

Cited by 2 publications

(1 citation statement)

References 15 publications

(17 reference statements)

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“…Optical switching performed by Si quasi-digital optical switch (DOS) based on reverse bias p-n diode and active ring resonators by poled-polymer/Si slot waveguides are demonstrated in Refs. [17][18][19]. Control and tuning delays of slow light photonic crystal Si waveguides are discussed in Refs.…”

Section: Introductionmentioning

confidence: 99%

Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties

et al. 2017

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Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of these active nanoscale waveguides are sensitive to the little changes in geometry, external injection/biasing, and doping profiles, and can be crucial in design and manufacturing processes. This paper brings the active silicon waveguide for complete characterization of various distinctive guiding parameters, including perturbation in real and imaginary refractive index, mode loss, group velocity dispersion, and bending loss, which can be instrumental in developing optimal design specifications for various application-centric active silicon waveguides.

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Section: Introductionmentioning

confidence: 99%

Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties

et al. 2017

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A 2 × 2 nonblocking Mach–Zehnder-based silicon switch matrix

Chen¹,

Wang²,

Guo³

et al. 2012

Opt. Express

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A 2 × 2 non-blocking switch matrix based on the Mach-Zehnder (MZ) interferometer was designed and fabricated on silicon-on-insulator (SOI) wafer through 0.8-μm standard commercial CMOS foundry. The two paired multimode-imaging (MMI) couplers in each MZ switching element were used as power splitters and combiners. Experimental results show that the switching elements are electrically driven with a switching speed of 17.4 ns and its cross-talk is lower than -16.1 dB under a common spectral bandwidth of 35 nm. The total switching power consumption varies from 4.55 mW to 22.4 mW for different switching paths.

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A silicon quasi‐DOS based on reverse‐biased pn diode

Cited by 2 publications

References 15 publications

Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties

Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties

A 2 × 2 nonblocking Mach–Zehnder-based silicon switch matrix

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