A silicon photodevice to operate in a photon flux integrated mode

A Review of the Pinned Photodiode for CCD and CMOS Image Sensors

“…We start our discussion with the emergence of integrating photodetector arrays used as image sensors. The integrating pn junction photodetector was first introduced by Weckler at Fairchild in 1965 [3], [4]. He noted that if a pn junction in an integrated circuit was initially reverse biased and then one terminal left floating (e.g.…”

“…For small pixels, fringing fields lead to rapid end-stage transfer. For field-assisted transfer across distance l, transfer time scales as l 3 , so for smaller pixels, transfer time is reduced both by an increase in fringing field from TG and from reduced lateral dimension of the SW. However, in larger pixels with "flat" potentials in the SW, transfer becomes diffusion-limited for end-stage transfer.…”

Ultra Low Noise CMOS Image Sensors

“…The idea of using silicon devices as photodetectors goes back to 1965 when the photosensing effect of pn junctions has been revealed for the first time by G. P. Weckler [15,16]. These early works showed that a reverse biased pn junction behaves as a capacitor charged by a photocurrent proportional to the incident light intensity.…”

CCD272-64 and GSENSE400BSI-GP CMOS quantum efficiency measurement in EUV and VUV

“…The first integrating p-n junction silicon photodetector 1,2 was demonstrated by G. P. Weckler at the Fairchild Semiconductor company in 1965. He noticed that a reverse biased silicon p-n junction in an integrated circuit could give a photocurrent under exposure to light, causing discharge of the voltage applied to the photodiode with accordance to its capacitance.…”