Abstract:MEMS piezoresistive sound detectors have been fabricated using the dissolved wafer process for the first time. The sensors utilize stress compensated PECVD ultra-thin silicon-nitride/oxide membrane together with monocrystalline ion-implanted p ++ silicon piezoresistors to achieve high sensitivity. Tests reveal that sensors with a diaphragm size of 710 µm have a static sensitivity of 1.1 µV VPa −1 with 2% non-linearity over an operating pressure range of 10 kPa. This sensitivity is substantially larger than tha… Show more
“…13. 7,9) The MDPs of previously reported Si piezoresistive microphones, [27][28][29] which are also straingauge-type microphones, are also shown in Fig. 13.…”
Strain-gauge sensors consisting of magnetic tunnel junctions (MTJs) have attracted attention because of their high strain sensitivity based on a novel strain sensing scheme different from the piezoresistive effect. To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGSs), we previously developed an MTJ film with magnetostrictive material that acutely rotates with strain. This review presents a Spin-SGS with a high gauge factor in excess of 5000, which was achieved by adopting an amorphous FeB-based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance Mg-O barrier MTJ. We also investigated the feasibility of using this Spin-SGS in microelectromechanical system (MEMS) sensor devices. This review also describes the properties of a "Spintronic MEMS (Spin-MEMS) microphone," in which Spin-SGSs are integrated onto a bulk micromachined diaphragm.
“…13. 7,9) The MDPs of previously reported Si piezoresistive microphones, [27][28][29] which are also straingauge-type microphones, are also shown in Fig. 13.…”
Strain-gauge sensors consisting of magnetic tunnel junctions (MTJs) have attracted attention because of their high strain sensitivity based on a novel strain sensing scheme different from the piezoresistive effect. To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGSs), we previously developed an MTJ film with magnetostrictive material that acutely rotates with strain. This review presents a Spin-SGS with a high gauge factor in excess of 5000, which was achieved by adopting an amorphous FeB-based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance Mg-O barrier MTJ. We also investigated the feasibility of using this Spin-SGS in microelectromechanical system (MEMS) sensor devices. This review also describes the properties of a "Spintronic MEMS (Spin-MEMS) microphone," in which Spin-SGSs are integrated onto a bulk micromachined diaphragm.
“…Another design with the same sensing mechanism as that of [54] has been proposed in [56] with a measured resonant frequency of 16 kHz. Piezoresistive microphones can be found in applications of fluidic mechanics [57,58] and aeroacoustics [52,59].…”
This paper reports a review about microelectromechanical system (MEMS) microphones. The focus of this review is to identify the issues in MEMS microphone designs and thoroughly discuss the state-of-the-art solutions that have been presented by the researchers to improve performance. Considerable research work has been carried out in capacitive MEMS microphones, and this field has attracted the research community because these designs have high sensitivity, flat frequency response, and low noise level. A detailed overview of the omnidirectional microphones used in the applications of an audio frequency range has been presented. Since the microphone membrane is made of a thin film, it has residual stress that degrades the microphone performance. An in-depth detailed review of research articles containing solutions to relieve these stresses has been presented. The comparative analysis of fabrication processes of single- and dual-chip omnidirectional microphones, in which the membranes are made up of single-crystal silicon, polysilicon, and silicon nitride, has been done, and articles containing the improved performance in these two fabrication processes have been explained. This review will serve as a starting guide for new researchers in the field of capacitive MEMS microphones.
“…These equivalent circuit representation are depicted in Fig. 16 (Huang et al 2002). To successfully understand the deflection of the diaphragm due to the incident sound pressure, the acoustic behavior of (20)…”
Section: Lumped Element Modelingmentioning
confidence: 99%
“…These diaphragms, or cantilever beams, deflect due to the incident sound pressure wave (Martin et al 2007). The deflection can be detected and further be transformed to an electrical signal, using some mechanisms such as capacitive (Scheeper et al 1992), piezoelectric (Horowitz et al 2006), piezoresistive (Huang et al 2002), and optical (Hall et al 2005). Microphones also have some vent channels to equalize the pressure of the cavity (Martin et al 2007).…”
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