2020
DOI: 10.1016/j.sna.2019.111749
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A significant enhancement in visible-light photodetection properties of chemical spray pyrolysis fabricated CdS thin films by novel Eu doping concentrations

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Cited by 80 publications
(19 citation statements)
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“…The quantum efficiency is an additional factor used to analyse the performance of the device. The can be defined as the fraction of incident photons which contribute to the external photocurrent [ [56] , [57] , [58] ]. here h is plank constant, c is light speed, R is responsivity, q is electron charge and is used light wavelength.…”
Section: Resultsmentioning
confidence: 99%
“…The quantum efficiency is an additional factor used to analyse the performance of the device. The can be defined as the fraction of incident photons which contribute to the external photocurrent [ [56] , [57] , [58] ]. here h is plank constant, c is light speed, R is responsivity, q is electron charge and is used light wavelength.…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, several researchers are focusing on CdS because it can be applied to devices, such as piezoelectric, photonic, and thin-film transistors [ 5 , 6 , 7 ]. CdS thin films are deposited using various techniques, such as “sputtering” [ 8 ], “molecular beam epitaxy (MBE)” [ 9 ], “chemical vapor deposition (CVD)” [ 10 ], “chemical bath deposition (CBD)” [ 11 ], and “spray pyrolysis” [ 12 ]. Each of these deposition techniques has its own set of advantages and disadvantages.…”
Section: Introductionmentioning
confidence: 99%
“…1024−1027 Shkir et al prepared Eu-doped CdS thin films by the spray pyrolysis method and investigated their optical and photoelectric properties. 1028 By varying the Eu doping concentration from 1 to 5 wt %, the direct bandgap could be tuned from 2.43 to 2.48 eV, which is attributed to electronic interactions between the 4f electrons of Eu and the s and p electrons of CdS. More importantly, at 5 wt % CdS:Eu, the photosensitivity increased almost 10-fold compared to undoped CdS.…”
Section: Photodetectorsmentioning
confidence: 94%
“…For UV–vis detection, semiconductors such as CdS, ZnO, and TiO 2 are commonly doped with rare-earth ions to enhance the photodetection performance. Shkir et al prepared Eu-doped CdS thin films by the spray pyrolysis method and investigated their optical and photoelectric properties . By varying the Eu doping concentration from 1 to 5 wt %, the direct bandgap could be tuned from 2.43 to 2.48 eV, which is attributed to electronic interactions between the 4f electrons of Eu and the s and p electrons of CdS.…”
Section: Technological Applicationsmentioning
confidence: 99%