A SiGe HBT BiCMOS technology for mixed signal RF applications

Ahlgren, D.; Freeman, G.; Subbanna, S.; Groves, R.; Greenberg, D.; Malinowski, J.; Nguyen-Ngoc, D.; Jeng, S. J.; Stein, K.; Schonenberg, K.; Kiesling, D.; Bartels, Martin; Wu, S.; Harame, D.L.; Meyerson, B.S.

doi:10.1109/bipol.1997.647434

Cited by 55 publications

(20 citation statements)

References 2 publications

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“…In order to quantify the improvement in factor of the differentially driven symmetric design, a five-turn square symmetric spiral inductor (with nominal inductance of 8 nH) was designed and fabricated in a triple-level metal BiCMOS technology [18]. In this section, the experimental test structure is described along with the procedure used to extract the experimental data.…”

Section: Resultsmentioning

confidence: 99%

Differentially driven symmetric microstrip inductors

Danesh

Long

2002

IEEE Trans. Microwave Theory Techn.

220

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Abstract-A differentially excited symmetric inductor that enhances inductor quality ( ) factor on silicon RF ICs is presented. Compared with an equivalent single-ended configuration, experimental data demonstrate that the differential inductor offers a 50% greater factor and a broader range of operating frequencies. Predictions from full-wave simulations and a physics-based SPICE-compatible model are validated by experimental measurements on an inductor fabricated in a triple-level metal silicon technology. Application of the symmetric inductor to a cross-coupled oscillator improves output voltage swing and phase noise by 75% and 1.8 dB, respectively (for a given power consumption), while chip area is reduced by 35% compared to conventional inductor equivalents.

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Section: Resultsmentioning

confidence: 99%

Differentially driven symmetric microstrip inductors

Danesh

Long

2002

IEEE Trans. Microwave Theory Techn.

220

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“…The absolute data rates achieved are not necessarily the primary consideration as cost is a major concern for the implementation of these technologies. Circuits using inexpensive high yield manufacturing processes such as SiGe [1] can be much more desirable than those using slightly faster more exotic III-V semiconductors. For valid comparison, circuit performance should always be qualified by the performance of the devices used in the implementation.…”

Section: Framingmentioning

confidence: 99%

“…To address this issue, when lower level common mode voltages are needed, emitter followers like those in Figure 4.11 are added. The level naming convention is also illustrated, with inputs and outputs having subscripts indicating the level (1-3) and whether it is the main signal line(0) or it's complement (1). Each junction in the emitter follower drops the output signal by VBE(on), preparing it for driving gate inputs which require that level.…”

Section: Gatesmentioning

confidence: 99%

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SiGe HBT BiCMOS for 2-160 Gb/s Next Generation Internet (NGI)

McDonald¹

2003

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“…The breakdown voltages of silicon CMOS or SiGe transistors with GHz for mm-wave (i.e., GHz 2 ) applications are typically less than 2 V, while III-V transistors with equivalent performance possess a breakdown greater than 8 V [19], [21]- [28]. Silicon-based power amplifiers require higher DC bias current (i.e.,…”

Section: A Active Devicesmentioning

confidence: 99%