A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz

Abstract

This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to 87 GHz. S11 is better than 11 dB. The simulated input 1 dB compression point is –23 dBm at 80 GHz with low power consumption of 26 mW from 1.2 V voltage supply. Layout area is 0.36 mm2.