A-Si:H buffer in a-SiGe:H solar cells

Lundszien, D.; Finger, F.; Wagner, H.

doi:10.1016/s0927-0248(02)00096-x

Cited by 30 publications

(10 citation statements)

References 4 publications

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“…10 However, they also pointed out that the FF of cells will not be improved because of a tradeoff between the a-Si:H buffer layer's conductivity, which may increase the series resistance R s of the cells, and the improved I/P interface quality, unlike the observed phenomena in a-Si:H or a-SiGe:H thin film solar cells. [15][16][17] In consistent with Sai et al, they proved that the adoption of a buffer layers in NIP-type lc-Si:H solar cells can effectively improve the V oc and FF. 11 To verify the origin of the FF improvement and whether it is related to the previously reported trade-off between the increased R s of cells and the decreased shunt current resulting from the enhanced I/P interface.…”

Section: A Simulation and Experimentssupporting

confidence: 68%

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Bai

Liu

Zhao

et al. 2015

Journal of Applied Physics

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A simulation and experimental study on the effect of the buffer layer at the I/P interface on the performance of NIP-type hydrogenated microcrystalline silicon (lc-Si:H) single-junction solar cells is presented. Device-quality hydrogenated amorphous silicon (a-Si:H) material as a buffer layer at the I/P interface obviously improves the performance of NIP-type lc-Si:H single-junction solar cells. In addition to the well-known mechanism that an a-Si:H I/P buffer layer can reduce the recombination current density at I/P interfaces, the optically and electrically calibrated simulations and supporting experimental results in this study illustrate that the performance improvement also originates from the mitigation of the electric screening effect due to the reduced defect density at the I/P interfaces, which reinforces the bulk electric field. Integrating an optimized hydrogen profiling strategy and adding a-Si:H I/P buffer layer yielded an initial efficiency of 9.20% for lc-Si:H single-junction solar cells with an active area of 0.27 cm 2 . This study may provide new ideas of further improving the performance of NIP-type lc-Si:H single-junction solar cells by mitigating the electric screening effect. V C 2015 AIP Publishing LLC.

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Section: A Simulation and Experimentssupporting

confidence: 68%

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Bai

Liu

Zhao

et al. 2015

Journal of Applied Physics

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“…The substantial fall in V oc with the increase of i-layer thickness can possibly correlate to the associated increase of defect densities. Higher defect densities affect the electric field and carrier collection, eventually yielding in poor V oc [23]. This decrease in V oc might be averted with the introduction of a wide bandgap buffer layer, which reduces shunt resistance and prevents leakage current through the p/i interface and i/n interface [24].…”

Section: Design and Optimizationmentioning

confidence: 99%

Amorphous Silicon Single-Junction Thin-Film Solar Cell Exceeding 10%Efficiency by Design Optimization

Kabir

Shahahmadi

Lim

et al. 2012

International Journal of Photoenergy

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The conversion efficiency of a solar cell can substantially be increased by improved material properties and associated designs. At first, this study has adopted AMPS-1D (analysis of microelectronic and photonic structures) simulation technique to design and optimize the cell parameters prior to fabrication, where the optimum design parameters can be validated. Solar cells of single junction based on hydrogenated amorphous silicon (a-Si:H) have been analyzed by using AMPS-1D simulator. The investigation has been made based on important model parameters such as thickness, doping concentrations, bandgap, and operating temperature and so forth. The efficiency of single junction a-Si:H can be achieved as high as over 19% after parametric optimization in the simulation, which might seem unrealistic with presently available technologies. Therefore, the numerically designed and optimized a-SiC:H/a-SiC:H-buffer/a-Si:H/a-Si:H solar cells have been fabricated by using PECVD (plasma-enhanced chemical vapor deposition), where the best initial conversion efficiency of 10.02% has been achieved (V oc = 0.88 V, J sc = 15.57 mA/cm 2 and FF = 0.73) for a small area cell (0.086 cm 2 ). The quantum efficiency (QE) characteristic shows the cell's better spectral response in the wavelength range of 400 nm-650 nm, which proves it to be a potential candidate as the middle cell in a-Si-based multijunction structures.

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“…The substantial fall in Voc with the increase of i-layer thickness can possibly correlate to the associated increase of defect densities. Higher defect densities affect the electric field and carrier collection, eventually yielding in poor Voc [8]. This decrease in Voc might be averted with the introduction of a wide band gap buffer layer, which reduces shunt resistance and prevents leakage current through the p/i interface and i/n interface [9].…”

Section: Single Junction Solar Cellmentioning

confidence: 99%

Effect of structural variations in amorphous silicon based single and multi-junction solar cells from numerical analysis

Kabir

Ibrahim

Sopian

et al. 2010

Solar Energy Materials and Solar Cells

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A-Si:H buffer in a-SiGe:H solar cells

Cited by 30 publications

References 4 publications

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Amorphous Silicon Single-Junction Thin-Film Solar Cell Exceeding 10%Efficiency by Design Optimization

Effect of structural variations in amorphous silicon based single and multi-junction solar cells from numerical analysis

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