A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

Jacunski, Mark; Shur, M. S.; Owusu, Albert A.; Ytterdal, Trond; Hack, M.; Iñı́guez, Benjamı́n

doi:10.1109/16.766877

Cited by 119 publications

(63 citation statements)

References 22 publications

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“…The charge drift-based model is not accurate to describe device behaviors in the subthreshold regime. The channel current can be presented as in [19], with a similar expression to conventional transistors,…”

Section: Subthreshold Regimementioning

confidence: 99%

“…Despite that many theories are proposed and reported to describe behaviors of various organic field effect transistors, the widely known ones are based on charge drift [19] in presence of tail-distributed traps [20] and variable range hopping [21]. For the charge drift model, a critical point is to figure out the quantity of charges at the dielectric-semiconductor interface.…”

Section: Model Theory and Derivationmentioning

confidence: 99%

“…To describe the DC behavior of charge transport in the device channel, a widely-accepted charge drift model [19] is presented here. As shown in Fig.…”

Section: B Charge Drift Modelmentioning

confidence: 99%

See 2 more Smart Citations

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

Herlogsson

Kergoat

et al. 2011

IEEE Trans. Electron Devices

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Abstract-We present a DC model to simulate the static performance of electrolyte-gated organic field effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed from voltage-dependent electric double layer capacitance. The voltage dependent contact effect and short channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.Index Terms-static model, electric double layer capacitance, field effect transistors, parameter extraction, polymer electrolyte

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Section: Subthreshold Regimementioning

confidence: 99%

Section: Model Theory and Derivationmentioning

confidence: 99%

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A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

Herlogsson

Kergoat

et al. 2011

IEEE Trans. Electron Devices

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“…where 11 and φ f0 = (E f0 − E C )/q. Herein, ϕ is the electrostatic potential, ε si is the polysilicon material permittivity, q is the electronic charge, V is the quasi-Fermi potential, φ t is the thermal voltage, and E f0 is the Fermi potential: E f0 = φ t ln (N d /n i ).…”

Section: Calculation Of Surface Potentialmentioning

confidence: 99%

Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs

Deng

Huang

2014

AIP Advances

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Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile charge and trap density into Poisson's equation, a closed form of band bending as a function of gate voltage is obtained and demonstrated as an accurate and computationally efficient solution. Based on surface potential, a drain current model for long-channel devices is provided in explicit forms. Furthermore, it is verified successfully by comparisons with both 2D numerical simulation and experimental data in different operation regions.

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“…The TFT switching-off resistance (Roff) cannot be expressed with a simple equation like Ron since it has complicated physical mechanisms (Jacunski, 1999). We note that ambient light dramatically decreases Roff.…”

Section: Hold Processmentioning

confidence: 99%

Active Matrix Driving and Circuit Simulation

Watanabe¹

2011

Features of Liquid Crystal Display Materials and Processes

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A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

Cited by 119 publications

References 22 publications

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs

Active Matrix Driving and Circuit Simulation

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