A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation

Wang, Pengfei; Lin, Xian; Liu, Lei; Sun, Qizhen; Zhou, Peng; Liu, Xiaoyong; Liu, Wei; Gong, Yi; Zhang, David Wei

doi:10.1126/science.1240961

Cited by 77 publications

(55 citation statements)

References 13 publications

(24 reference statements)

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“…The threshold voltage (V th ) of the FG-MOSFET can be changed by charging or discharging the FG via pTFET [9]. The operation voltage setting is shown in Table I.…”

Section: Device Design and Direct Current Characteristicsmentioning

confidence: 99%

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Lin

Liu

Zhang

et al. 2015

IEEE Trans. Electron Devices

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A semifloating-gate transistor had been proposed and its memory function has been demonstrated recently. In this paper, we further investigate its temperature dependency, device scalability, and device modeling. The high-temperature behavior is studied by measuring its endurance, retention, and disturbance immunity at 85°C. The device scalability down to the 14-nm technology node is investigated by simulation. Its macrodevice model for circuit design is also developed. Finally, a memory array with the specific peripheral circuits is designed using the device model developed in this paper.

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“…The threshold voltage (V th ) of the FG-MOSFET can be changed by charging or discharging the FG via pTFET [9]. The operation voltage setting is shown in Table I.…”

Section: Device Design and Direct Current Characteristicsmentioning

confidence: 99%

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Lin

Liu

Zhang

et al. 2015

IEEE Trans. Electron Devices

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“…This letter reports the feasibility of the semi-floating gate transistor (SFGT) as a gamma-ray dosimeter, the structure was presented last year [10], while these is no literature for dosimeter applications yet. An embedded large area PIN diode is introduced instead of oxide surrounding the floating gate as sensitive region to detect radiation.…”

Section: Introductionmentioning

confidence: 99%

“…This allows a reduction in active volume as the ionization energy of Si is much lower than SiO 2 . Since the operation of pre-charge can be achieved via the diode between floating gate and drain region, rather than tunneling through inter-poly-dielectric between injector gate and floating gate, much lower voltages are needed, and the operation endurance can be improved as reported in [10].…”

Section: Introductionmentioning

confidence: 99%

Feasibility Study of Semifloating Gate Transistor Gamma-Ray Dosimeter

Wang

Xiang

et al. 2015

IEEE Electron Device Lett.

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The feasibility study of semifloating gate (SFG) transistor dosimeter consisting a large area p-i-n diode between floating gate and drain region is described. No bias is applied during irradiation. The SFG is charged via the diode when exposed to gamma rays, and reset with the diode positively biased. A comprehensive device simulation that includes the mechanism of charge collection, the operation of device's threshold voltage (V th) reading, and the effect of diode dark current have been carried out with sentaurus TCAD. As a result, high linear dependence of the V th on the absorbed dose of ionizing radiation is observed with a sensitivity of 65.8 mV/Gy, which suggests that this device could be used as a sensitive gamma-ray dosimeter.

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“…This results in two effects: (1) an abrupt increase in I D -V DS (kink effect) at a given V GS , (2) negative transconductance in I D -V G at a given V DS . Since the drain and source regions are highly doped even at V DS ¼ 0 V, the light excitable areas (underlap and spacer) are fully depleted; therefore, with the increase in V DS , the photocurrent remains limited by the photon density, whereas tunneling current tends to increase with it.…”

mentioning

confidence: 98%

Partially gated lateral tunnel field effect transistor for optical applications

Daǧtekın

Ionescu

2014

Applied Physics Letters

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Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output resistance (photo-resistor), (2) phototransistor operation that is attained when back-gate is used to store optically generated carriers which in return modulate the transconductance of the transistor in on-state. Simulation results show that the investigated devices have the potential to give rise to new circuit topologies exploiting interaction between light and band-to-band tunneling processes, and improve the area efficiency of pixel sensors owing to their optical gain and charge storage mechanism. V C 2014 AIP Publishing LLC.[http://dx.doi.org/10.1063/1.4904026] Tunnel Field Effect Transistor (TFET) which has been singled out by International Technology Roadmap for Semiconductor for low power applications owing to its steeper switching characteristics compared to MOSFET holds great potential for various sensor applications, such as for detection of molecules and light intensity sensing. 1,2 In the recent years, semiconductor optoelectronic devices have been of great interest as they facilitate on-chip optical communication and image processing. 3 In this letter, we investigate silicon-based partially gated TFET as light detection devices and their possible applications.The structure of the TFET used in experiments is shown in Figure 1. The fabrication of investigated devices was carried out by CEA-LETI on an SOI substrate with 145 nm BOX and 20 nm active Si layer using MESA process. 4 The gate stack is composed of 6 nm SiO 2 , 10 nm TiN, and 50 nm Poly Si. The Si 3 N 4 protection layer was deposited and patterned to introduce an intrinsic region (L in ) adjacent to the nþ doped region. This channel extension (underlap) and spacer regions are transparent, unlike the gate stack which reflects a large fraction of the optical power received on the sample at the intermediary interfaces and partially absorbs it.With first order approximations, it is found that the light attaining the channel through the gate stack is 15-90 times weaker, depending on the wavelength, compared to the light intensity obtained in the non-gated region. The experimental results shown in the following parts in this letter belong to a device with gate length (L g ) ¼ 2 lm, spacer length (L spacer ) ¼ 30 nm, gate width (W g ) ¼ 10 lm, and L in ¼ 0.5 lm, and measurements are taken at room temperature and with the back gate grounded unless otherwise mentioned. In a previous study, it has been shown that the impact of light penetrating through the spacer adjacent to the pþ doped region and the gate stack is found to be not negligible yet relatively small, compared to L in . 5 Typical lateral embodiment of a TFET has two features in common with the elementary photosensitive devices, photodiodes: (1) p/i/n structure, (2) operation in reverse bias. In the measured devices, the light absorption in...

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A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation

Cited by 77 publications

References 13 publications

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Feasibility Study of Semifloating Gate Transistor Gamma-Ray Dosimeter

Partially gated lateral tunnel field effect transistor for optical applications

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