A Self-Sustained Circuit Building Block Based on 10-kV Silicon Carbide Devices for High-Voltage Applications

Hu, Boxue; Wei, Zhuo; Li, He; Xing, Diang; Scott, Mark J.; Na, Risha; Wang, Jin

doi:10.1109/jestpe.2019.2918991

Cited by 27 publications

(12 citation statements)

References 30 publications

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“…Systematic assessment methodology of the developed HB-PEBB is presented in refs. [42,87]. The PD-free operation for both internal and external insulation systems of the HB-PEBB are confirmed at 6 kV differential-mode voltage, and maintains PD-free condition until 33.2 kV common-mode voltage.…”

Section: Integrated Capacitor-blocked Transistor (Icbt)mentioning

confidence: 68%

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Mocevic

Fan

et al. 2022

iEnergy

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Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gatedriver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Sibased ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.

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Section: Integrated Capacitor-blocked Transistor (Icbt)mentioning

confidence: 68%

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Mocevic

Fan

et al. 2022

iEnergy

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“…[45]- [49], [50], [51] [50], [51] [21], [52] [53], and in [57]- [59]. Internal APSs of HV MMCs may, however, have lower requirements for interwinding capacitance and isolation strength depending on the submodule capacitor voltage as described in [13], [58].…”

Section: B Implementationmentioning

confidence: 99%

“…The voltage ratio is decided by the ratio of the upper resistor, R hv , and the equivalent resistance of the lower branch. A prototype with 7 kV input voltage has been demonstrated in [12], [13]. It employs a 4.5 kV Si MOSFET in the lower arm voltage regulator and is designed as APS for a 10 kV SiC MOSFET as the main switch.…”

Section: ) Voltage Dividersmentioning

confidence: 99%

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Auxiliary Power Supplies for High-Power Converter Submodules: State of the Art and Future Prospects

Heinig

Jacobs

Ilves

et al. 2022

IEEE Trans. Power Electron.

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Recent developments in medium-voltage (MV) silicon and silicon carbide (SiC) power semiconductor devices are challenging state-of-the-art converter and auxiliary power supply (APS) designs. The APS is an important converter component, which energizes the gate-drive units and, therefore, has an influence on the overall reliability and efficiency of the converter system. There has, however, been comparably little research on how the APS of high-power converter submodules can be realized, in particular for high-voltage (HV) applications. New, or improved, solutions may build on state-of-the-art topologies in the near future, but utilize MV SiC technology in the APS circuit itself to enable improved efficiency, reliability, simplicity, and compactness. Externally-fed APS concepts could provide several further advantages. Their various benefits on converter and system level may enable them to be a competitive solution for future APS concepts. Especially light-based power supply systems are considered most useful since they offer extreme voltage isolation capability and immunity to electromagnetic interference.This article presents a review of the wide range of solutions for APSs, possible implementation options, and the most important design considerations. The different solutions are evaluated in a qualitative fashion, providing an overview of available APS concepts with regard to the requirements for high-power converter applications.

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“…On such cases, each SM board must have a floating isolated power supply -generally a DC-DC converter, whose input is the DC capacitor voltage from the respective SM. The literature presents the development of medium voltage DC-DC converters to be used as a self power supplies when the SMs operate over thousands of volts -such as the 3kV series-connected MOSFET converter presented in [26] or the 10kV Silicon Carbide converter presented in [27]. On this particular project, the capacitors of the SMs developed in subsection V-A are limited to 800V -hence off-the-shelf DC-DC converters can be used.…”

Section: B Self Power To Smsmentioning

confidence: 99%

Development of a Modular Educational Kit for Research and Teaching on Power Electronics and Multilevel Converters

et al. 2021

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This paper presents the detailed project of a modular educational kit to be used in research and teaching activities in the area of power electronics -with emphasis on applications in medium voltage multilevel converters. The half bridge topology has been chosen for the submodules, as they can be arranged together in a multitude of other topologies. A system composed by a mother board and daughter cards is presented. A DSP control card and a FPGA System-On-Module are inserted in the mother board in order to control the half bridge submodules. The targets of this project are applications in medium voltage -hence, the communication between the submodules and the FPGA/DSP is performed through optical fibers. Also a self power system is presented for the submodules, in order for them to operate at floating potentials. Experimental results have been presented for the most usual topologies of converters, including a Modular Multilevel Converter operating at 2000V.

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A Self-Sustained Circuit Building Block Based on 10-kV Silicon Carbide Devices for High-Voltage Applications

Cited by 27 publications

References 30 publications

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Auxiliary Power Supplies for High-Power Converter Submodules: State of the Art and Future Prospects

Development of a Modular Educational Kit for Research and Teaching on Power Electronics and Multilevel Converters

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