Abstract:A self-isolation scheme is proposed for fabricating transistors in semiconductor integrated circuits. Such integrated circuits with double-diffused transistors require three diffusions and one epitaxial layer in the proposed process. Since no isolation or reachthrough diffusions are involved, this technique could reduce the area of a memory or logic cell by 50% or more. 430 M. B. VORA
IntroductionSince the advent of planar silicon technology and its application in the fabrication of npn bipolar transistors, se… Show more
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