A self-isolated intelligent IGBT for driving ignition coils

Abstract

A self-isolated intelligent IGBT for driving ignition coils has been developed for the first time. It fits in TO-220 package and monolithically integrates a vertical IGBT with NMOS driving-and protection-circuits by adding only 4 mask steps to the standard IGBT process.This intelligent I GBT survives unclamped inductive switching energy of 300mJ at Tj=150°C due to advanced collector-current-ballasting-resistor technique, and it has eliminated the latching problem of parasitic thyristors located at integrated NMOS devices by a new Zenerresistor-networking protection technique. Excellent current-limiting operation under VGE=3 .5V driving has been realized by newly developed high-frequency gatedecoupling and collector-to-gate resistive feed-back techniques.