A self‐consistent model for short‐channel mosfets

Abstract

A dc model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modelling of the output conductance and the transconductance which are important in analogue circuit simulation. The theoretical predictions of the model are in good agreement with the experimental data available in the literature.problem becomes 2-D in nature, and the gradual channel approximation fails. The gradual channel approximation, used in the source region, assumes that the normal electric field, controlled by the gate and substrate biases, is much larger than the longitudinal field, controlled by the drain and source biases. This assumption validates the use of a one-dimensional analysis in the source region to find the width of the depletion region under the channel. Several analytical approaches are used in the literature to find ld and the channel field in the drain region. They can be broadly classified into two types of model: 0894-3370/89/