A self-consistent global model of solenoidal-type inductively coupled plasma discharges including the effects of radio-frequency bias power

Kwon, Deuk-Chul; Chang, Won−Seok; Park, Min; You, D. H.; Song, Mi‐Young; You, S. J.; Im, Yeon-Ho; Yoon, Jung‐Sik

doi:10.1063/1.3572264

Cited by 31 publications

(17 citation statements)

References 28 publications

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“…The electron heating module uses a spatially averaged electron temperature equation [11]. The equation can be arranged as in Eq.…”

Section: Plasma Modulementioning

confidence: 99%

“…We estimate that this tendency related with electron density around particle. From researches of Kwon et al [11,12] and Bae et al [13], we could predict that electron density increase as induced plasma source power increase. And this effect could increase the repulsive force between charged particles.…”

Section: Plasma Source Powermentioning

confidence: 99%

“…To simulate the plasma state, we refer to a self-consistent global model suggested by D. C Kwon et al [11,12]. This model can numerically predict a set of spatially averaged fluid equations for ions, neutrons and radicals.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of silicon nanoparticle formation in inductively coupled plasma using a modified collision frequency function

Kim

Shin

et al. 2014

J Mech Sci Technol

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A model is presented to describe particle growth in inductively coupled plasma. The model consists of plasma chemistry and a coagulation module that adopts a modified collision frequency function. The modified collision frequency function is modified by a collision correlation factor that reflects the repulsive force of the particle charge in plasma in order to describe the reduction of coagulation among medium size particles (around 100 nm). In this model, plasma state and concentration of nuclei are determined by a spatially averaged global model in the plasma chemistry module. Particle growth is calculated by a coagulation module. To verify the validity of the model, comparison analysis is performed between experimental data obtained with PBMS and models, some of which are modified by a collision correlation factor. The analysis is performed with respect to dependencies on synthesis time, plasma source power and chamber pressure. From the analysis, we confirm the validity of the model that adopts a modified collision frequency function for the plasma condition.

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“…The electron heating module uses a spatially averaged electron temperature equation [11]. The equation can be arranged as in Eq.…”

Section: Plasma Modulementioning

confidence: 99%

Section: Plasma Source Powermentioning

confidence: 99%

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Modeling of silicon nanoparticle formation in inductively coupled plasma using a modified collision frequency function

Kim

Shin

et al. 2014

J Mech Sci Technol

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“…In addition, some theoretical research has also been put forward to investigate the bias effect in a combined plasma reactor with both ICP power and RF bias. 8,[14][15][16][17][18][19] Rauf et al 8 employed the hybrid plasma equipment model (HPEM) with a detailed plasma chemistry description and showed that the RF bias power had very little effect on the ion and electron densities in an Ar/SF 6 discharge. Hoekstra and Kushner 14 focused on the IED by using the HPEM coupled with the plasma chemistry Monte Carlo simulation module.…”

Section: Introductionmentioning

confidence: 99%

“…Tinck et al 16 illustrated with the HPEM that the energy and fluxes of the ions hitting the substrate became higher at increasing bias, and this gave rise to a higher etch rate. Kwon et al 17 presented a self-consistent global model combined with a sheath module to examine the bias power effect on the plasma properties. Finally, Zhang and Kushner 18 and Rauf 19 investigated the influence of the bias power on the etch rate in C 2 F 6 and CF 4 /O 2 plasmas, respectively.…”

Section: Introductionmentioning

confidence: 99%

Fluid simulation of the bias effect in inductive/capacitive discharges

Zhang

Gao

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.

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