A Self-Assembled Graphene Ribbon Device on SiC

Abstract

Graphene ribbons, which may be fabricated by a wide variety of experimental techniques such as chemical processing, unzipping or etching of carbon nanotubes, molecular precursors, ion implantation, and so on, can find promising applications in interconnects, terahertz sensors, and plasmonic devices. Here we report measurements on self-assembled graphene ribbons that are prepared by a controlled high-temperature sublimation technique. The epitaxial graphene ribbons on SiC can be readily and efficiently located by confocal laser scanning microscopy for device fabrication using a removable metal protection layer to avoid contamination of the graphene and hexagonal boron nitride to serve as a top-gate dielectric spacer. These self-assembled graphene ribbons have smooth edges, and the observation of a magnetoresistance side peak in such a structure is consistent with diffusive boundary scattering in the quasi-ballistic regime. In contrast, graphene ribbons defined by electron-beam lithography and subsequent conventional reactive ion etching on the same SiC wafer only show pronounced negative magnetoresistance due to strong disorder in the edge structures (chemical dopants, the resolution of electron-beam lithography, etc.). Our experimental approaches are applicable to wafer-scale, graphene-based integrated circuits.

Ballistic transport and surface scattering in (In,Ga)As-InP heterostructure narrow channels

“…The suppression of the quantum fluctuations due to the averaging by the 8 independently fluctuating segments gave rise to the emergence of peaks indicated by the arrows. The peak reminds us of the effect of diffuse boundary scattering in long quasi-ballistic channels, for which L > l e > W [31,32]. The diffuse component in the boundary scattering causes an increase of the resistance when the cyclotron diameter is comparable with the channel width.…”

The growth of epitaxial graphene on SiC and its metal intercalation: a review

“…Device with high thermal transport can be fabricated based on the heterogeneous interface of SiC and graphene layer [48]. Graphene nano-ribbon can be assembled on SiC, which also has special application for electronic device [49].…”

“…This method reduces the fabrication temperature and accurately controls the carbon ion dose, which enables the large-scale preparation of highquality graphene directly on SiC. Moreover, graphene nanobands can be grown on the surface of SiC by the decomposition process assisted by foreign atoms of C or Ar atmosphere [49], which exhibit excellent physical properties and can be applied to graphene patterning.…”