A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

Device linearity improvement of In0.49Ga0.51P/In0.15Ga0.85As doped-channel FETs with a metal plug alloy process

“…From table 1, we observe that OR-DCFETs demonstrate much better linearity characteristics than conventional devices, suggesting that OR-DCFETs assure low intermodulation distortion and are capable of suppressing interference in digital communication systems. Therefore, a better linearity power performance can be expected for the OR-DCFETs by suppressing the third (or higher)-order intermodulation, which is very important to reduce the adjacent channel leakage power in a personal handy-phone system [2]. The maximum cut-off frequency ( f T ) and maximum oscillation frequency ( f max ) for both devices were carried out by an HP8510 network analyzer.…”

“…In recent years, the demand for high current, high power, high power-added-efficiency (PAE) and high linearity power devices has rapidly increased in the use of digital communication systems. In particular, the device linearity has become a crucial figure of merit of power amplifier applications due to the need of very low distortion or low adjacent channel leakage power for cellular phone systems [1][2][3]. This calls for appropriate designs of devices offering a wide range of linearity.…”