A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si

Shin, Kumjae; Lee, Hoon-Taek; Sung, Min Gyu; Lee, Sang hoon; Shin, Hyunjung; Moon, Wonkyu

doi:10.1016/j.micron.2017.07.011

Cited by 2 publications

(2 citation statements)

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“…The ToGoFET probe has been used to study polarization of a piezoelectric material [21], dielectric properties of oxide films [23,24], and ion damages on the semiconductor material [22]. Probe stability has gradually improved, but remains of concern.…”

Section: Structural Design Modificationmentioning

confidence: 99%

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Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

et al. 2021

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We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The - characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.

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Section: Structural Design Modificationmentioning

confidence: 99%

“…We term this the tip-on-gate of field-effect-transistor (ToGoFET) probe. We studied polarization of piezoelectric materials [21] and electrical damage caused by ion milling [22]. Recently, the local capacitances of dielectric films have been studied [23,24].…”

Section: Introductionmentioning

confidence: 99%