A Scanning Probe Microscopy Based Assay for Single-Walled Carbon Nanotube Metallicity

Lü, Wei; Xiong, Yao; Hassanien, A.; Zhao, Wei; Zheng, Ming; Chen, Liwei

doi:10.1021/nl900194j

Cited by 60 publications

(87 citation statements)

References 25 publications

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“…m-SWCNTs (ε > 1000) have significantly higher dielectric constants 51 than sc-SWCNTs (ε < 10); larger diameter SWCNTs also have larger dielectric constants than small ones. 52 One strategy for generating a band gap in graphene also relies on 1d quantum confinement; by decreasing one lateral dimension to form a graphene nanoribbon 53 (GNR), the resulting electronic character depends on the orientation of the lattice and the width of the ribbon, in an analogous manner to SWCNT helicity and diameter. However, scattering from edges and the dependence on edge functionalities introduces additional complexities.…”

Section: Electronic Properties Of Neutral Carbon Nanomaterialsmentioning

confidence: 99%

Charged Carbon Nanomaterials: Redox Chemistries of Fullerenes, Carbon Nanotubes, and Graphenes

et al. 2018

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Since the discovery of buckminsterfullerene over 30 years ago, sp 2 -hybridised carbon nanomaterials (including fullerenes, carbon nanotubes, and graphene) have stimulated new science and technology across a huge range of fields. Despite the impressive intrinsic properties, challenges in processing and chemical modification continue to hinder applications. Charged carbon nanomaterials (CCNs), formed via the reduction or oxidation of these carbon nanomaterials, facilitate dissolution, purification, separation, chemical modification, and assembly. This approach provides a compelling alternative to traditional damaging and restrictive liquid phase exfoliation routes. The broad chemistry of CCNs not only provides a versatile and potent means to modify the properties of the parent nanomaterial but also raises interesting scientific issues. This review focuses on the fundamental structural forms: buckminsterfullerene, single-walled carbon nanotubes, and single-layer graphene, describing the generation of their respective charged nanocarbon species, their interactions with solvents, chemical reactivity, specific (opto)electronic properties, and emerging applications. CONTENTS

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Section: Electronic Properties Of Neutral Carbon Nanomaterialsmentioning

confidence: 99%

Charged Carbon Nanomaterials: Redox Chemistries of Fullerenes, Carbon Nanotubes, and Graphenes

et al. 2018

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“…Among them, we can cite nanoscale capacitance microscopy [1][2][3], electrostatic force microscopy (EFM) [4][5][6][7][8][9][10], nanoscale impedance microscopy [11,12], scanning polarization force microscopy [13][14][15][16], scanning microwave microscopy (SMM) [17,18] and nanoscale non-linear dielectric microscopy [19]. These techniques have allowed measuring the electric permittivity with nanoscale spatial resolution on planar samples, such as thin oxides, polymer films and supported biomembranes [2][3][4]8,10], and on non-planar ones, such as, single carbon nanotubes, nanowires, nanoparticles, viruses and bacterial cells [20][21][22][23][24][25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale dielectric microscopy of non-planar samples by lift-mode electrostatic force microscopy

et al. 2016

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Lift-mode electrostatic force microscopy (EFM) is one of the most convenient imaging modes to study the local dielectric properties of non-planar samples. Here we present the quantitative analysis of this imaging mode. We introduce a method to quantify and subtract the topographic crosstalk from the lift-mode EFM images, and a 3D numerical approach that allows for extracting the local dielectric constant with nanoscale spatial resolution free from topographic artifacts. We demonstrate this procedure by measuring the dielectric properties of micropatterned SiO 2 pillars and of single bacteria cells, thus illustrating the wide applicability of our approach from materials science to biology.

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“…Methods for measuring m-SWCNT content can be divided into bulk sample techniques and countingbased techniques. Counting-based techniques more accurately enumerate m-and sc-nanotubes and typically rely on their electrical and/or optical performance [20][21][22][23][24][25][26][27][28][29]. Although these methods give relatively accurate results, they involve tedious fabrication processes and costly instruments.…”

mentioning

confidence: 99%

Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors

Ding

Finnie

et al. 2015

Nano Res.

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With recent improvements in carbon nanotube separation methods, the accurate determination of residual metallic carbon nanotubes in a purified nanotube sample is important, particularly for those interested in using semiconducting single-walled carbon nanotubes (SWCNTs) in electronic device applications such as thin-film transistors (TFTs). This work demonstrates that Raman microscopy mapping is a powerful characterization tool for quantifying residual metallic carbon nanotubes present in highly enriched semiconducting nanotube networks. Raman mapping correlates well with absorption spectroscopy, yet it provides greater differentiation in purity. Electrical data from TFTs with channel lengths of 2.5 and 5 μm demonstrate the utility of the method. By comparing samples with nominal purities of 99.0% and 99.8%, a clear differentiation can be made when evaluating the current on/off ratio as a function of channel length, and thus the Raman mapping method provides a means to guide device fabrication by correlating SWCNT network density and purity with TFT channel scaling.As-prepared single-walled corbon nanotube (SWCNT) raw materials contain bundles of nanotubes with a 2:1 semiconducting (sc-) to metallic (m-) ratio and other impurities such as catalysts and amorphous carbon [1][2][3]. For electrical devices, these raw materials must be debundled, purified, and enriched [4][5][6][7][8][9][10][11]. It has been demonstrated that for network thin-film transistors (TFTs), the m-tube content should be less than 2% [3]. For more demanding applications, such as high-frequency logic circuits and display backplanes, the m-tube content should be less than a few ppm given the need for high mobility and high current on/off ratios [12]. In recent years, multiple efforts have led to significant progress in solution-based enrichment techniques, with sc-SWCNT purities in excess of 99% routinely achieved. This leap, however, has now started to reveal the limits of common characterization methods, and other tools are required to provide accurate purity assessment [13,14].Typically, the purity of enriched sc-SWCNTs is Nano Research 2 Nano Res. estimated from the UV absorption spectrum by comparing the peak areas associated with the m-or sc-species [12,[15][16][17]. This method works well for samples whose peaks are well defined and for which background absorption is not dominant. However, as the sc-species purity increases, the features associated with m-tube absorption will gradually disappear and the precise subtraction of the background absorption will dramatically influence the calculated results and introduce uncertainty [18]. As an alternative, we have previously used a different purity metric, denoted as φ, which is based on the ratio of the sc-peak area over the total absorption background from the metallic (M 11 ) and semiconducting (S 22 ) absorption bands [16].Although we presume that φ correlates well with purity for highly pure samples, it does not provide a quantitative assessment. Furthermore, a solution sample is not nece...

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A Scanning Probe Microscopy Based Assay for Single-Walled Carbon Nanotube Metallicity

Cited by 60 publications

References 25 publications

Charged Carbon Nanomaterials: Redox Chemistries of Fullerenes, Carbon Nanotubes, and Graphenes

Charged Carbon Nanomaterials: Redox Chemistries of Fullerenes, Carbon Nanotubes, and Graphenes

Nanoscale dielectric microscopy of non-planar samples by lift-mode electrostatic force microscopy

Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors

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