A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (I)

Graczyk, J. F.; Chaudhari, P.

doi:10.1002/pssb.2220580116

Cited by 57 publications

(10 citation statements)

References 23 publications

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“…First of all we can state that the structure factors obtained with amorphous Germanium agree well with those of other workers [18,19]. In [18] also an "elastical" experiment (energy resolution 3 eV) was performed, whereas in [19] the inelastically scattered background was measured with a crystalline Germanium specimen and fitted according to [15].…”

Section: Discussionmentioning

confidence: 80%

On the Investigation of the Structure of Amorphous Substances by Means of Electron Diffraction

Paasdie

Olbrich

Schestag

et al. 1982

Zeitschrift Für Naturforschung A

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A "Scanning High Energy Electron Diffraction"-(SHEED-)apparatus is described with which the intensity curves of elastically scattered electrons are obtained within a few minutes. The elimination of the inelastic background is done by means of an electrostatic filter with an energy resolution of 10 4 , which is only limited by the line width of the beam producing system. The intensity curves obtained experimentally are corrected for multiple scattering.The pair correlation functions of amorphous Germanium as obtained by electron and X-ray diffraction are compared. The electron diffraction curves agree well with the corresponding curves of other authors. The same stands for the curves obtained with X-rays. The differences between the curves obtained with electrons and X-rays are discussed.

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Section: Discussionmentioning

confidence: 80%

On the Investigation of the Structure of Amorphous Substances by Means of Electron Diffraction

Paasdie

Olbrich

Schestag

et al. 1982

Zeitschrift Für Naturforschung A

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“…To calculate the interference function @(s) of eqn. (Grigorovici 1973, Graczyk andChaudhari 1973), however the interactive repeated Fourier transformation required was not convenient on the TN-5500. The experimental scanning system allowed collection of the diffraction data in the range (k-30.~-l , which was large enough to give useful resolution and to allow the termination errors to be reduced by the use of an artificial temperature factor exp(-Bs') multiplying @(s).…”

Section: Q 7 Radial Distribution Analysismentioning

confidence: 99%

Structural study of hydrogenated amorphous silicon–carbon alloys

Sproul

McKenzie

Cockayne

1986

Philosophical Magazine B

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“…Both Si and Ge targets are deposited as amorphous material and it is known that ion bombardment does not affect the degree of amorphisation (23).…”

Section: Resultsmentioning

confidence: 99%

Ion-beam mixing in silicon and germanium at low temperatures

Clark¹,

Marwick²,

Poker³

1983

Nuclear Instruments and Methods in Physics Research

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Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34K and 77K. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7xiol 6 ions cm"^; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63xlO 16 ions cm" 2 . In silicon, Pt markers were found to broaden at about the same rate at 34K and 77K; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34K did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34K, but at 77K only the Al marker broadened; the Si marker did not. His calculations are based on the theory of random flights, using power law cross sections to compute the recoil ranges, while the energy spectrum of moving atoms follows the usual low energy 1/E 2 law. However Sigmund and Gras Marti's calculation (9) of an ostensibly similar quantity (the contribution of low-energy recoils: the so-called "cascade mixing") yields a rate of increase of the variance of a thin marker which is about an order-of-magnitude smaller than experimentally measured values.When the contribution of rare high energy recoils is included bySigmund and Gras-Marti, the rate of increase of variance becomes much larger, but arises mainly from an extended tail formed on the marker distribution. This tail is not included in most experimental measurements of the variance, which are typically obtained by fitting a Gaussian to the marker profile.The identification of the mechanism of broadening of marker layers as ballistic mixing mainly rests on the absence of any temperature dependence of the diffusion coefficient when irradiations are performed at sufficiently low temperature (2,10), and on the linear dependence on damage rate already mentioned. An additional contribution of defect-mediated diffusion has been noted at higher temperatures, generally near or above room temperature in silicon (2,3). where it occurs, defect-mediated motion can yield diffusion coefficients larger than than those due to ballistic mixing, and allows the formation of crystalline phases which would be absent if ballistic diffusion were the only operative transport mechanism.Unfortunately, observation of a temperature-independent diffusion coefficient is not sufficient to guarantee that ballistic mixing is the dominant mechanism, because under certain conditions diffusion by interstitialcy mechanisms can , in principle, also be temperature independent t 11 ). It is therefore quite difficult to rule out a point defect contribution, except by irradiating at such low temperatures that inters itials are immobile.In the present study ion beam mixing of thin marker layers in Si and Ge was investigated using BBS. By comparing mixing rates of different solutes at 34K and 77K it wa...

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A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (I)

Cited by 57 publications

References 23 publications

On the Investigation of the Structure of Amorphous Substances by Means of Electron Diffraction

On the Investigation of the Structure of Amorphous Substances by Means of Electron Diffraction

Structural study of hydrogenated amorphous silicon–carbon alloys

Ion-beam mixing in silicon and germanium at low temperatures

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