A scalable EE_HEMT based large signal model for multi‐finger AlGaN/GaN HEMTs for linear and non‐linear circuit design

Zomorrodian, Valiallah; Pei, Yutao; Mishra, Umesh K.; York, R.A.

doi:10.1002/pssc.200983877

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…The simulated PAE is slightly larger than measured PAE. This is mainly due to 978-1-4244-7732-6/101$26.00 ©201 0 IEEE 3 515 underestimation of the simulated harmonic balance drain current by the HEMT model [9]. Figure 4-(b) shows the power measurements vs. simulation obtained for the circuit with the Imm HEMT.…”

Section: Fabricationmentioning

confidence: 93%

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High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

Zomorrodian

Pei

Mishra

et al. 2010

2010 IEEE MTT-S International Microwave Symposium

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Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AIGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 x 1251lm) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 x 1251lm) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output power, and maximum gain of 13 dB. The key to obtaining the high gain, PAE and output power produced by these circuits is accurate modeling of the HEMTs and the passive components.Index Terms -GaN, high electron mobility transistor (HEMT), high power, monolithic microwave integrated circuits (MMIC), Class E, power amplifier, large signal model, non linear

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Section: Fabricationmentioning

confidence: 93%

“…Excellent scalability of the model was also demonstrated. Details about the extraction and performance of this model can be found in [9].…”

Section: Active and Passive Modelingmentioning

confidence: 99%

High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

Zomorrodian

Pei

Mishra

et al. 2010

2010 IEEE MTT-S International Microwave Symposium

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“…On the other hand, GaN HEMT (gallium nitride high-electron-mobility transistor) devices, due to their broad frequency response and high power density, are widely used in communication, radar, aerospace, and other fields [21][22][23][24][25]. The accuracy of HEMT device models is crucial for MMIC (microwave monolithic integrated circuit) design success and performance.…”

Section: Introductionmentioning

confidence: 99%

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

Li,

Ge,

Liang

et al. 2024

Micromachines

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This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios.

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Modeling approaches for GaN HEMTs

Chauhan,

Pampori,

Ahsan

2024

GaN Transistor Modeling for RF and Power Electronics

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A scalable EE_HEMT based large signal model for multi‐finger AlGaN/GaN HEMTs for linear and non‐linear circuit design

Cited by 7 publications

References 10 publications

High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

Modeling approaches for GaN HEMTs

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