A rutherford scattering study of the diffusion of heavy metal impurities in silicon to ion-damaged surface layers

Buck, T.M.; Poate, J. M.; Pickar, K.A.; Hsieh, C. M.

doi:10.1016/0039-6028(73)90225-2

Cited by 54 publications

(11 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Vasiliu et al [16] observed that, at elevated substrate temperatures, surface features were minimized within the bombarded area of an Fe sample, but that features, atypical of thermal facetting, were observed outside the irradiated area. Hermanne has also reported (private communication) that surface feature growth during ion bombardment of Cu can be inhibited at 350 to 400 ~ C, whereas features produced by room temperature irradiation can only be annealed at temperatures >> 400 ~ C. This evidence suggests that bombardment may enhance surface diffusion, just as it is known to enhance volume diffusion in a number of circumstances [22]. The process of radiation damage enhanced diffusion is usually associated with the presence of a vacancy density in excess of the thermal equilibrium density.…”

Section: Oo\at]ol Omentioning

confidence: 75%

The influence of surface diffusion on topography development of an amorphous solid during sputtering

Carter

1976

J Mater Sci

View full text Add to dashboard Cite

The erosion and development of topography on an initially contoured amorphous solid due to the simultaneous action of ion beam sputtering and surface diffusion, is analysed. It is shown that derivation of formal expressions for the local rate of co-ordinate motion and radius of curvature is straight forward. Application of detailed prediction of the time varying behaviour of the surface profile is analytically difficult, however, and computational methods are suggested. The case of radiation enhanced surface diffusion is also considered briefly.

show abstract

Section: Oo\at]ol Omentioning

confidence: 75%

The influence of surface diffusion on topography development of an amorphous solid during sputtering

Carter

1976

J Mater Sci

View full text Add to dashboard Cite

show abstract

“…of the spectrum for the top of the Ta/Ta205 peak shown in Fig. 1 indicates a slight concave nature, rather than an expected slight linear increase due to the increased backscattering due to the E-2 term (10,11). This concavity is not observed for partially anodized films or for tantalum metal films.…”

Section: Uniformity Of the Oxide Films--a Close Inspectionmentioning

confidence: 83%

“…The preparation of the beta-tantalum films, the Rutherford backscattering technique, and the general methods of analysis have been described in earlier papers (8)(9)(10)(11). This study on beta-tantalum films differs 2rom the earlier study (8) in that the conditions were optimized to yield a more accurate evalua-tion of the argon and tantalum spectra.…”

Section: Experi Mentalmentioning

confidence: 99%

“…In earlier studies on the composition of oxide films formed on TazN~ (7), and either TaxSil-x (8) or TaxTil-x (9) alloy films, it was assumed that the transport number of oxide films grown on beta-tantalum was the same as alphatantalum. The latter two studies (8,9) involved Rutherford backscattering (10,11) which allows for a convenient method of determining this number without resorting to radioactive isotopes, chemical sectioning, or sputtering. This technique can easily detect the approximately 4 atom percent (a/o) argon (8,12) incorporated uniformly in the beta-tantalum film during the sputtering process.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Tantalum Ion Transport Number during the Anodic Oxidation of Beta‐Tantalum Films

Schwartz¹,

Augustyniak²

1978

J. Electrochem. Soc.

View full text Add to dashboard Cite

In this study Rutherford backscattering has been used to determine the tantalum ion transport number during the anodic oxidation of beta-tantalum films. The required marker is the argon uniformly incorporated in tantalum during sputtering. The transport number for Ta +~ ions for beta-tantalum anodic oxidation is 0.25 • 0.02 at 1 mA/cm 2 and 23.5~C, and there is a weak dependence on the electric field used during the oxide growth. These results are identical to that obtained for bulk alpha-(bcc) -tantalum, which may indicate that the transport number is not controlled by the crystal structure associated with the metal-oxide interface. For metal films which are anodized completely through to the substrate, there is an apparent 1% tantalum excess in the outer portion of the oxide. This effect may be associated with the argon incorporation in the oxide, or a nonequilibrium ratio of Ta/O, or a low atomic weight impurity.

show abstract

“…RBS is the development of the historical experiment of Rutherford with α-radiation for the study the atomic structure of solids as an analytical tool for the investigation of surface films on solids. 17 In corrosion research and materials science it has been used to study the composition of surface films on valve metals, i.e. relatively thick oxide layers in the range of several 10 nm up to more than 100 nm forming on metals like Al, Ta etc.…”

Section: Rutherford Backscattering (Rbs)mentioning

confidence: 99%

Review—Ion Scattering as a Surface Analytical Tool for the Study of Passive Layers

Strehblow

2021

J. Electrochem. Soc.

View full text Add to dashboard Cite

Among several surface analytical methods Ion Scattering is a possibility to study the composition and depth profile of passive layers. Examples are presented for Rutherford Backscattering Spectroscopy (RBS) for the investigation of thick oxide layers up to more than 100 nm on Al containing additions of other metals like Cu and low Energy Ion Scattering Spectroscopy (ISS or LEIS) for thin passive layers of a few nm thickness of binary alloys. The chemical structure of thin passive layers with a high depth resolution is obtained by ISS depth profiles, which supports the results for these films obtained by X-ray Photoelectron Spectroscopy (XPS). A reliable specimen preparation in an electrochemical cell attached to the UHV spectrometer, i.e. in a closed system is described, which helps to exclude changes and artifacts by unwanted environmental factors, which might affect the results of fundamental investigations.

show abstract

A rutherford scattering study of the diffusion of heavy metal impurities in silicon to ion-damaged surface layers

Cited by 54 publications

References 25 publications

The influence of surface diffusion on topography development of an amorphous solid during sputtering

The influence of surface diffusion on topography development of an amorphous solid during sputtering

Tantalum Ion Transport Number during the Anodic Oxidation of Beta‐Tantalum Films

Review—Ion Scattering as a Surface Analytical Tool for the Study of Passive Layers

Contact Info

Product

Resources

About