2019
DOI: 10.1002/adma.201902264
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A Robust Nonvolatile Resistive Memory Device Based on a Freestanding Ultrathin 2D Imine Polymer Film

Abstract: Here, the synthesis of a wafer‐scale ultrathin 2D imine polymer (2DP) film with controllable thickness from simple benzene‐1,3,5‐tricarbaldehyde (BTA) and p‐phenylenediamine (PDA) building blocks is reported using a Schiff base polycondensation reaction at the air–water interface. The synthesized freestanding 2DP films are porous, insulating, and more importantly, covalently linked, which is ideally suited for nonvolatile memristors that use a conductive filament mechanism. These devices exhibit excellent swit… Show more

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Cited by 125 publications
(152 citation statements)
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“…An anisotropic transport was evidenced in the layer‐stacked 2D BECOFs accompanied with an intrinsic electrical conductivity up to ≈10 −7 S cm −1 and a carrier mobility up to ≈1.0 cm 2 V −1 s −1 (ac limit by photoconductivity measurements) . However, unlike imine‐based 2D conjugated COFs that have already shown promising applications in electronic devices, such as field‐effect transistors and memristors, it remains a great challenge to integrate 2D BECOFs into logic and memory devices due to the difficulty in thin‐film processability and device integration associated with the necessity of controlling film thickness, layer orientation, stability and crystallinity.…”
Section: Introductionmentioning
confidence: 99%
“…An anisotropic transport was evidenced in the layer‐stacked 2D BECOFs accompanied with an intrinsic electrical conductivity up to ≈10 −7 S cm −1 and a carrier mobility up to ≈1.0 cm 2 V −1 s −1 (ac limit by photoconductivity measurements) . However, unlike imine‐based 2D conjugated COFs that have already shown promising applications in electronic devices, such as field‐effect transistors and memristors, it remains a great challenge to integrate 2D BECOFs into logic and memory devices due to the difficulty in thin‐film processability and device integration associated with the necessity of controlling film thickness, layer orientation, stability and crystallinity.…”
Section: Introductionmentioning
confidence: 99%
“…Polymer‐based materials are another class of promising contenders for the development of novel resistive memory devices 17,43,44,49,74,108,111‐129 . Polymer functional materials possess similar advantages to organic small molecules, such as low cost, good flexibility, and ease of processing, which can serve as alternatives or supplements to their inorganic counterparts 43,111‐120 . As a consequence, numerous research attention have been paid to exploit various kinds of polymer materials that own appealing memory performances.…”
Section: Polymer‐based Materials For Resistive Memorymentioning
confidence: 99%
“…Among the progresses of polymer‐based resistive memories, single‐component polymers have aroused extensive concern due to their advantage of realizing binary and multilevel resistive memory switching within one designed macromolecule, which can avoid the probability of phase separation in composite systems 17,63,114,115 . In 2012, Liu et al reported the first single‐component polymer‐based ternary memory device of P55 (Figure 10A,B) 63 by combining the D‐A induced CT and conformational change mechanisms, which stimulated the research interests of obtaining multilevel storage in a single polymer system.…”
Section: Polymer‐based Materials For Resistive Memorymentioning
confidence: 99%
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“…Opening up new possibilities for the synthesis and structureproperty relationships of 2DCPs, this attempt was the first time that the use of this interface obtained a monolayer sheet (0.7 nm thickness) with lateral dimensions of tens of micrometers. Recently, Liu et al [47] successfully synthesized a wafer-scale ultrathin 2D imine polymer film with controllable thickness from a simple benzene-1,3,5-tricarbaldehyde (BTA) and p-phenylenediamine (PDA) building block by using a Schiff-base polycondensation reaction at the air-water interface. Creating the potential for new applications, such 2D polymer films exhibited excellent switching performance with high reliability and reproducibility in memory devices because their intrinsically porous structures were conducive to the formation of conductive filaments during device operation.…”
mentioning
confidence: 99%