A Robust Memristor Based on Epitaxial Vertically Aligned Nanostructured BaTiO₃−CeO₂ Films on Silicon

Abstract

With the exploration of ferroelectric materials, researchers have a strong desire to explore the next generation of non‐volatile ferroelectric memory with silicon‐based epitaxy, high‐density storage, and algebraic operations. Herein, a silicon‐based memristor with an epitaxial vertically aligned nanostructures BaTiO3–CeO2 film based on La0.67Sr0.33MnO3/SrTiO3/Si substrate is reported. The ferroelectric polarization reversal is optimized through the continuous exploring of growth temperature, and the epitaxial structure is obtained, thus it improves the resistance characteristic, the multi‐value storage function of five states is achieved, and the robust endurance characteristic can reach 109 cycles. In the synapse plasticity modulated by pulse voltage process, the function of the spiking‐time‐dependent plasticity and paired‐pulse facilitation is simulated successfully. More importantly, the algebraic operations of addition, subtraction, multiplication, and division are realized by using fast speed pulse of the width ≈50 ns. Subsequently, a convolutional neural network is constructed for identifying the CIFAR‐10 dataset, to simulate the performance of the device; the online and offline learning recognition rate reach 90.03% and 92.55%, respectively. Overall, this study paves the way for memristors with silicon‐based epitaxial ferroelectric films to realize multi‐value storage, algebraic operations, and neural computing chip applications.

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

“…As shown in Figure d, it can be observed that there is almost no fluctuation during 10 consecutive cycles, proving a superior stability. In addition, two kinds of short-term synaptic plasticity, PPF and PPD, − which play a key role in the realization of advanced learning and memory in the human brain, were emulated in the Al/ZnO NPs/CuO NWs/Cu-based memristor. Thereinto, the PPF behavior was induced by the excitatory postsynaptic potential, while the PPD can be ascribed to the inhibitory postsynaptic potential.…”

Flexible Ferroelectric Devices: Status and Applications

“…In the past decades, ferroelectric memory has been widely studied because of its fast-switching speed, good cycle durability, and simple physical mechanism. [155][156][157][158][159] Importantly, the storage mechanism of ferroelectric memory is generated by electrically switchable ferroelectric polarization, in which two ferroelectric polarization states corresponding to storage "0" and "1" are generated by positive and negative remanent polarizations. It is non-volatile [160] and the read/write process can be achieved up to nanosecond.…”

Interface Engineering and Device Applications of 2D Ultrathin Film/Ferroelectric Copolymer P(VDF‐TrFE)

“…It is reasonable to deduce that the distribution of CeO 2 destroys the long‐range Coulomb potential of crystal and contributes to increased stability in this epitaxial film. [ 43 ]…”

“…It is reasonable to deduce that the distribution of CeO 2 destroys the longrange Coulomb potential of crystal and contributes to increased stability in this epitaxial film. [43] Besides organic polymers like PVDF and P(VDF-TrFE), many thin-film ferroelectrics have been applied in 2D devices. For instance, complex oxides ABO 3 -type perovskites and binary oxide HfO 2 with fluorite-structure are also used in the integration of ferroelectrics into 2D material-based devices.…”