2020
DOI: 10.1109/tcsi.2020.2971642
|View full text |Cite
|
Sign up to set email alerts
|

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
20
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
5
4

Relationship

1
8

Authors

Journals

citations
Cited by 36 publications
(20 citation statements)
references
References 40 publications
0
20
0
Order By: Relevance
“…The MAC results can be parallel computed to improve the performance. In addition, the multi-states resistive cell can provide higher precision and density to the CIM architecture [61]. For instance, the resistance of RRAM cell can be changed continuously from KΩ to MΩ between HRS and LRS [62][63][64].…”
Section: Emerging Non-volatile Memory Solutions On Cim Architecturementioning
confidence: 99%
“…The MAC results can be parallel computed to improve the performance. In addition, the multi-states resistive cell can provide higher precision and density to the CIM architecture [61]. For instance, the resistance of RRAM cell can be changed continuously from KΩ to MΩ between HRS and LRS [62][63][64].…”
Section: Emerging Non-volatile Memory Solutions On Cim Architecturementioning
confidence: 99%
“…They had previously used the same idea to construct a family of hybrid CMOS-memristive logic devices, so that the approach was compatible with existing CMOS logic [163]. In addition to the aforementioned achievements, a novel RRAM-based very long instruction word (VLIM) architecture for an in-memory computing (ReVAMP) system was also proposed [164]. Its data storage and computation memory (DCM) that performs data and in-memory computation makes use of RRAM crossbar memory, while the instruction memory (IM) stores the instruction and is accessed using the program counter (PC).…”
Section: Potential For Logic Operationsmentioning
confidence: 99%
“…The energy cost per DP for CM in Table III is obtained by substituting C = C BL and V o = ∆V BL in (21), and using (25) with…”
Section: Compute Memorymentioning
confidence: 99%