Solid-State Electronics
 2023
DOI: 10.1016/j.sse.2022.108507
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A rigorous Fermi-Dirac statistics-based MOSFET channel surface potential equation using polylogarithms

A. Ortíz‐Conde
1
,
Omar López-López2,
Edmundo Gutiérrez-Domínguez3
et al.
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Cited by 2 publications
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