A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system

Germanium islands have been grown on Si(001) by solid-source molecular-beam epitaxy at temperatures between 325 and 900 °C. The formation of metastable {105} faceted clusters and macroislands was investigated by real-time reflection high-energy electron diffraction. Up to 600 °C, the two-dimensional (2D)-three-dimensional (3D) growth transition through the formation of hut clusters appears at a temperature-independent critical thickness, while the coalescence to macroislands is thermally activated. An activation barrier was also found for the 2D–3D growth transition directly to macroislands at growth temperatures above 600 °C. The crossing of the two competing transitions at 600 °C determines the two growth regimes.

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A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system

Cited by 6 publications

References 16 publications

Control of morphological transitions during heteroepitaxial island growth by reflection high-energy electron diffraction

Control of morphological transitions during heteroepitaxial island growth by reflection high-energy electron diffraction

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Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction

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