A RF Redundant TSV Interconnection for High Resistance Si Interposer

Abstract

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

Thermodynamic Multi-Field Coupling Optimization of Microsystem Based on Artificial Intelligence

“…First of all, a 4 × 4 TSV array is simulated and discussed. The establishment and simulation steps of the finite element model are shown in Figure 2 [ 3 , 27 ]. Figure 3 shows the structural model between the two TSVs.…”

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A Novel Interposer Channel Structure with Vertical Tabbed Vias to Reduce Far-End Crosstalk for Next-Generation High-Bandwidth Memory

“…HBM has a 3D stacked structure based on through-silicon vias (TSVs). The development of silicon interposer interconnection technologies, such as interposer channel and TSV, are essential for the development of next-generation HBM and chip-to-chip interfaces [ 1 , 2 ]. HBM is designed as a parallel interface structure with 1024 IOs [ 3 ].…”

An Anisotropic Equivalent Thermal Model for Shield Differential Through-Silicon Vias

“…Through-silicon via (TSV) is a key structure of 3D integrated circuits (IC) [1][2][3][4][5]. TSVbased 3D ICs have a shorter interconnect length, higher integration density, faster data communication, and lower power consumption [6][7][8][9][10].…”