A review on RF micro-electro-mechanical-systems (MEMS) switch for radio frequency applications

Kurmendra,; Kumar, Rajesh

doi:10.1007/s00542-020-05025-y

Cited by 46 publications

(12 citation statements)

References 70 publications

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“…Furthermore, capacitive RF MEMS switches are characterized by greater reliability and are subject to fewer failure mechanisms. In addition, for the design of RF MEMS switches of medium and low power, switches with a capacitive contact type have an important advantage—the ability to design switch designs with a low value of the pull-down voltage [ 24 , 27 , 28 , 29 , 30 , 31 , 32 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

2023

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In this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant frequency of 3.6 GHz and 3.4 GHz, respectively, as well as to work both in mobile communication devices and in the design of the architecture of 5G mobile networks, in particular in arrays of integrated antennas and radio-frequency interface modules. The manufacture and study of two designed structures are researched. For the first manufactured experimental sample in the open state the insertion loss is no more than −0.69 dB and the reflection loss is −28.35 dB, and in the closed state the isolation value is at least −54.77 dB at a central resonant frequency of 3.6 GHz. For the second in the open state the value of the insertion loss is no more than −0.67 dB and the reflection loss is −20.7 dB, and in the closed state the isolation value is not less than −52.13 dB at the central resonant frequency of 3.4 GHz. Both manufactured experimental samples are characterized by high linearity, as well as a small value of contact resistance in the closed state.

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Section: Introductionmentioning

confidence: 99%

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

2023

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“…For instance, the drive * Authors to whom any correspondence should be addressed. modes of the reported switches include electrostatic drive, thermal drive, piezoelectric drive, etc [3][4][5], and the signal processing types of them include series contact type, parallel capacitive type, etc [6]. These switches have excellent performances on one or several aspects [1,6].…”

Section: Introductionmentioning

confidence: 99%

“…modes of the reported switches include electrostatic drive, thermal drive, piezoelectric drive, etc [3][4][5], and the signal processing types of them include series contact type, parallel capacitive type, etc [6]. These switches have excellent performances on one or several aspects [1,6]. With the gradual deepening research of the measurement and application, more researches on reliabilities of the switches are reported.…”

Section: Introductionmentioning

confidence: 99%

High-reliability circular-contact RF MEMS switches in silicon hermetic package

Jiang¹,

Ma²,

Wang³

et al. 2023

J. Micromech. Microeng.

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This paper presents a high reliable direct-contact electrostatic RF MEMS switch. To enhance the reliability, the contact structure of the switch is designed into a circular shape, and the bottom contact surface is covered by a hard metal Pt layer. Besides, a high resistance silicon cap is used for hermetic packaging of the switch structure. By theoretical calculation and FEM simulation, parameters of the switch structure as well as its packaging are co-designed and optimized. During fabrication, the circular contact structure is formed by a three-step etching process; and after fabrication, the silicon hermetic packaging is realized by epoxy bonding and multi-step dicing process. The measured insertion loss and isolation of the switch with package is -0.41@ 20GHz, and -20.9@20GHz. Because of the optimization design, the RF performance of the switch keeps almost unchanged before and after packaging. The measured driving voltage is 50~60V, and the ON/OFF switching time is 25μs/5μs. The lifetime test shows that the switch passes the 2.6 billion times hot switching at the working power of 25 dBm. Finally, the switch also shows good performances in package leak rate test.

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“…Based on their structure and operation, optical switches have different types, the most important of which are electro-optical 2 , thermal-optical 3 , magnetic-optical 4 , MEMS-based 5 , SOA-based 6 , and photonic crystals –based 7 switches. In addition to the aforementioned technologies, it is possible to realize a new type of optical switch in optoelectronics 8 when it comes to the advent of 2D materials such as graphene with the capability of controlling the density of highly mobile electrons on the surface.…”

Section: Introductionmentioning

confidence: 99%

First designing of a silicene-based optical MOSFET with outstanding performance

Emami-Nejad

Mir

Lorestaniweiss

et al. 2023

Sci Rep

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Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperature. Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. The designed device is comprised of a silicene optical waveguide whose switching operation is performed by a gate and has a structure similar to an enhancement MOSFET with a formed channel. Unlike graphene, the surface conductivity of silicene can be controlled by both chemical potential and an electric field perpendicular to its surface. This unique feature of silicene is used to design and simulate an optical-MOSFET with transverse electric polarization at 300 K. The salient characteristics of the optical device include its nanoscale dimensions, ultra-low insertion loss of 0.13 dB, infinite extinction ratio, and quality factor of 688, proposing it as a promising tool for optical integration.

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A review on RF micro-electro-mechanical-systems (MEMS) switch for radio frequency applications

Cited by 46 publications

References 70 publications

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

High-reliability circular-contact RF MEMS switches in silicon hermetic package

First designing of a silicene-based optical MOSFET with outstanding performance

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