A review on plasma-etch-process induced damage of HgCdTe

Lingfeng, Liu; Chen, Yiyu; Yu, Zhenhua; Ding, Ran

doi:10.1016/j.infrared.2018.03.009

Cited by 13 publications

(5 citation statements)

References 69 publications

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“…The HgCdTe detector is actually a single pixel of a focal plane array and ready for flip-chip bonding. The meta-lens consisting of a nano-pillar array is proposed to be fabricated by hard-mask-assisted reactive ion etching [36][37][38][39][40][41] . The hard mask made of SiO 2 can enhance the etching selectivity by over 37 times 38 compared to a photoresist mask, and then enable the formation of high-aspect-ratio structures [39][40][41] .…”

Section: Device Structurementioning

confidence: 99%

HgCdTe mid-Infrared photo response enhanced by monolithically integrated meta-lenses

Deng

Zhou

et al. 2020

Sci Rep

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for S m = 5 μm × 5 μm or S m = 10 μm × 10 μm. Further, the meta-lens exhibits a good dispersion tolerance over the wavelength range from 3.3 μm to 5 μm. The averaged detectivity enhancement over this spectrum range is around 3 times for S m = 5 μm × 5 μm and 2 times for S m = 10 μm × 10 μm. The angular response of the meta-lens integrated detector depends on the focal length. For a focal length of 73 μm, the AOV for a 5 μm × 5 μm photosensitive area is 4.0°. When the focal length is reduced to 38 μm, the AOV for a 5 μm × 5 μm photosensitive area increases to 7.7° and it reaches 15.4° for a 10 μm × 10 μm photosensitive area. For the inter-pillar distance to be 2 μm in our design, the influence of the coupling effect between the nano-pillars on the performance of the meta-lens is little. Therefore, the monolithic integration of a meta-lens provides us a promising way to enhance the performance of infrared photodetectors and even focal plane arrays.

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Section: Device Structurementioning

confidence: 99%

HgCdTe mid-Infrared photo response enhanced by monolithically integrated meta-lenses

Deng

Zhou

et al. 2020

Sci Rep

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“…11 A role-allocated graphene/ZnO heterostructure sensor has been reported to increase the NO 2 gas-sensing response to approximately 30 times higher than that of the graphene sensor. 12 In the past 20 years, low RF plasma and plasma facilities have been successfully used in various applications, such as the fabrication of PV device, 13 surface passivation and plasma etching, 14,15 wafer cleaning technology, 16 surface decontamination of medical devices, 17 sanitization of delicate, 18 heatsensitive surfaces in the electronics industry, and reduction of thermal degradation during food processing. 19,20 The RF plasma technology is also used to improve the gas-sensing performance.…”

Section: ■ Introductionmentioning

confidence: 99%

“…In the past 20 years, low RF plasma and plasma facilities have been successfully used in various applications, such as the fabrication of PV device, surface passivation and plasma etching, , wafer cleaning technology, surface decontamination of medical devices, sanitization of delicate, heat-sensitive surfaces in the electronics industry, and reduction of thermal degradation during food processing. , The RF plasma technology is also used to improve the gas-sensing performance. − However, the treatment mechanism of plasma is less involved in current studies, and the improvement in sensing performance is uncertain, either surface etching or cleaning.…”

Section: Introductionmentioning

confidence: 99%

Oxygen-Plasma-Assisted Enhanced Acetone-Sensing Properties of ZnO Nanofibers by Electrospinning

Yang

et al. 2020

ACS Appl. Mater. Interfaces

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In this Article, ZnO nanofibers were prepared by electrospinning. The as-prepared ZnO electrospun fibers were treated with plasma. The morphology, structure, and element content of the ZnO nanofibers greatly changed after treatment with different plasmas. The test results indicated that the acetone-sensing performance was remarkably improved for oxygen-plasma-assisted ZnO nanofibers. Furthermore, the density function theory (DFT) calculation results revealed that the acetone adsorption energy of ZnO nanofibers treated with oxygen plasma was 2 times greater than that of untreated ZnO nanofibers, and the electrons transferred between ZnO nanofibers and acetone molecules produced a more remarkable change in electronic structure for the oxygen-plasma-treated ZnO nanofibers. Our work demonstrates that the oxygen plasma treatment method can help improve the acetone-sensing performance of ZnO nanofibers.

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“…Several etching methods can be employed, namely (a) wet chemical etching, (b) pure physical ion-beam etching (IBE), and (c) a combination of chemical and physical reactive-ion plasma etching. While ion-beam etching and reactive-ion plasma etching enable precise control over the etch depth, they induce doping and crystal damage in the material [4][5][6]. On the contrary, wet chemical etching preserves the pristine quality of the crystal structure.…”

Section: Introductionmentioning

confidence: 99%

Realization of smooth side profile using diffusion-controlled wet chemical etching for HgTe/(Hg,Cd)Te heterostructures

et al. 2023

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We utilize a diffusion-controlled wet chemical etching technique to fabricate microstructures from two-dimensional HgTe/(Hg,Cd)Te-based topological insulators. For this purpose, we employ a KI:I2:HBr:H2O-based etchant. Investigation of the side profile of the etched heterostructure reveals that HgTe quantum wells protrude from the layer stack as a result of the different etch rates of the layers. This constraint poses challenges for the study of the transport properties of edge channels in HgTe quantum wells. In order to achieve a smoother side profile, we develop a novel approach to the etching process involving the incorporation of a sacrificial design element in the etch mask. This limits the flow of charge carriers to the ions in the electrolyte during the etching process. The simplicity of the method coupled with the promising results achieved thereby should make it possible for the new approach introduced here to be applied to other semiconductor heterostructures.

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A review on plasma-etch-process induced damage of HgCdTe

Cited by 13 publications

References 69 publications

HgCdTe mid-Infrared photo response enhanced by monolithically integrated meta-lenses

HgCdTe mid-Infrared photo response enhanced by monolithically integrated meta-lenses

Oxygen-Plasma-Assisted Enhanced Acetone-Sensing Properties of ZnO Nanofibers by Electrospinning

Realization of smooth side profile using diffusion-controlled wet chemical etching for HgTe/(Hg,Cd)Te heterostructures

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