2014
DOI: 10.1088/0022-3727/47/39/393001
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A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells

Abstract: We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work… Show more

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Cited by 78 publications
(71 citation statements)
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“…Their use for the manufacture of SCs is a natural step in the development of methods for texturing thin-film SCs [4,5]. Nanowires of silicon, ZnO, CdSe, InP, and GaAs [5][6][7][8][9] or, more precisely, aligned, ordered, or disordered arrays of nanowires of these materials fit this purpose. They are used to produce SCs with axial [8] or radial junctions [5][6][7]9].…”
mentioning
confidence: 99%
“…Their use for the manufacture of SCs is a natural step in the development of methods for texturing thin-film SCs [4,5]. Nanowires of silicon, ZnO, CdSe, InP, and GaAs [5][6][7][8][9] or, more precisely, aligned, ordered, or disordered arrays of nanowires of these materials fit this purpose. They are used to produce SCs with axial [8] or radial junctions [5][6][7]9].…”
mentioning
confidence: 99%
“…This is useful in removing the surface oxide of SnONPs that mediate the adsorption of Si atoms into SnONPs. [12,14,15] In our experiments failing H 2 plasma, the growth of NWs is not observed due to inefficiency of Si adsorption posed by the surface oxide layer. It is worth mentioning that H 2 plasma helps in the formation of SnONPs and the reduction of the surface oxide layer caused due to the minimization of the energy.…”
Section: Growth Of Nws From Organic and Inorganic Compounds Of Snmentioning
confidence: 57%
“…Nevertheless, until now, these methods are used either to produce SiNWs, SiO x NWs or silica NWs. [3,[11][12][13] This work demonstrates the growth of Si-SiO x NWs simultaneously without additional process steps in large quantities, which are uniform, well defined, and better aligned. This process does not pose problems associated with non-conformal coating due to the shadowing of NWs and allows the optimization and controlled growth with a mature and already available PECVD technique at low temperatures (300°C).…”
mentioning
confidence: 81%
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“…However, thinning down the absorber layer will reduce light absorption, hence potentially limiting the performance of solar cells. Therefore, sophisticated nanotechnology approaches for advanced light trapping have been realized to improve the light trapping, including nanotubes, nanopillars, and nanowires (NWs) . In particular, NWs have gained attention due to the ability to deposit solar cells on top of them and achieving a very good performance with ultra‐thin absorbing layers .…”
mentioning
confidence: 99%