A review on binary metal sulfide heterojunction solar cells

Moon, Dae‐Gyu; Rehan, Shanza; Yeon, Deuk Ho; Lee, Seung Min; Park, Sun Jae; Ahn, Se Jin; Cho, Yong Soo

doi:10.1016/j.solmat.2019.109963

“…41 All NMR spectra were measured with Oxford Varian 300 and AS500 spectrometers at room temperature unless otherwise stated. Solvent peaks were used as internal standard for the 1 H NMR (300 and 500 MHz), 13 C NMR (75 and 125 MHz).…”

Section: Methodsmentioning

confidence: 99%

“…13 C{ 1 H} NMR (125 MHz, C6D6) δ 30.6 (s, CH3), 59.1 (s, Cq). CH3) 13. C{ 1 H} NMR (125 MHz, C6D6) δ 30.5 (s, CH3), 61.1 (s, C).…”

mentioning

confidence: 99%

Synthesis, Characterization and Thermal Study of Divalent Germanium, Tin and Lead Triazenides for Atomic Layer Deposition

Samii¹,

Zanders²,

Fransson³

et al. 2021

Preprint

0

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The number of M–N bonded divalent group 14 precursors suitable for atomic layer deposition is limited, in particular for Ge and Pb. A majority of the reported precursors are dicoordinated, with the only tetracoordinated example being the Sn(II) amidinate. No such Ge(II) and Pb(II) compounds have been demonstrated. Herein, we present tetracoordinated Ge(II), Sn(II) and Pb(II) complexes bearing two sets of the bidentate 1,3-di-tert-butyl triazenide ligands. These compounds are highly volatile and show ideal behavior by thermogravimetric analysis. However, they have unusual thermal properties and exhibit instability during sublimation. Interestingly, the instability is not only temperature dependent but also facilitated by reduced pressure. Using quantum-chemical density functional theory, a gas-phase decomposition pathway was mapped out. The pathway account for the unusual thermal behavior of the compounds and is supported by electron impact mass spectrometry data.

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“…This latter aspect has been particularly exploited for the development of novel optoelectronic and photovoltaic PV devices [ 3 , 4 ]. In addition to the nanoparticle form, PbS thin films is another functional form of PbS that is highly interesting for various applications, including thin film solar cells [ 5 , 6 ] or infrared detectors [ 7 , 8 , 9 ]. In fact, the capacity of PbS films to efficiently absorb and convert light over a wide spectrum (ranging from UV, to visible to near-IR), and their long exciton lifetime (0.2–0.8 ms) are major assets that make them very suitable for various optoelectronic device applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

Rebhi

¹

,

Hajjaji

²

,

Leblanc-Lavoie

³

et al. 2021

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This work focuses on the dependence of the features of PbS films deposited by pulsed laser deposition (PLD) subsequent to the variation of the background pressure of helium (PHe). The morphology of the PLD-PbS films changes from a densely packed and almost featureless structure to a columnar and porous one as the He pressure increases. The average crystallite size related to the (111) preferred orientation increases up to 20 nm for PHe ≥ 300 mTorr. The (111) lattice parameter continuously decreases with increasing PHe values and stabilizes at PHe ≥ 300 mTorr. A downshift transition of the Raman peak of the main phonon (1LO) occurs from PHe = 300 mTorr. This transition would result from electron–LO–phonon interaction and from a lattice contraction. The optical bandgap of the films increases from 1.4 to 1.85 eV as PHe increases from 50 to 500 mTorr. The electrical resistivity of PLD-PbS is increased with PHe and reached its maximum value of 20 Ω·cm at PHe = 300 mTorr (400 times higher than 50 mTorr), which is probably due to the increasing porosity of the films. PHe = 300 mTorr is pointed out as a transitional pressure for the structural and optoelectronic properties of PLD-PbS films.

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“…Group 14 metal chalcogenides are of interest due to their outstanding electrical and optical properties. 1 In particular, the mono-chalcogenides, such as germanium sulfide (GeS) 2 , germanium selenide (GeSe) 2 , tin sulfide (SnS) [2][3][4][5][6][7][8][9] , tin selenide (SnSe) 2,10-12 and lead sulfide (PbS) [13][14][15][16][17][18][19] have potential application in future optoelectronic and solar cell technologies. The manufacture of these electronic devices requires the deposition of high-quality thin films with high control and reproducibility.…”

Section: Introductionmentioning

confidence: 99%

“…All NMR spectra were measured with Oxford Varian 300 and AS500 spectrometers at room temperature unless otherwise stated. Solvent peaks were used as internal standard for the 1 H NMR (300 and 500 MHz),13 C NMR (75 and 125 MHz).…”

mentioning

confidence: 99%

Synthesis, Characterization and Thermal Study of Divalent Germanium, Tin and Lead Triazenides for Atomic Layer Deposition

Samii¹,

Zanders²,

Fransson³

et al. 2021

Preprint

0

View full text Add to dashboard Cite

The number of M–N bonded divalent group 14 precursors suitable for atomic layer deposition is limited, in particular for Ge and Pb. A majority of the reported precursors are dicoordinated, with the only tetracoordinated example being the Sn(II) amidinate. No such Ge(II) and Pb(II) compounds have been demonstrated. Herein, we present tetracoordinated Ge(II), Sn(II) and Pb(II) complexes bearing two sets of the bidentate 1,3-di-tert-butyl triazenide ligands. These compounds are highly volatile and show ideal behavior by thermogravimetric analysis. However, they have unusual thermal properties and exhibit instability during sublimation. Interestingly, the instability is not only temperature dependent but also facilitated by reduced pressure. Using quantum-chemical density functional theory, a gas-phase decomposition pathway was mapped out. The pathway account for the unusual thermal behavior of the compounds and is supported by electron impact mass spectrometry data.

show abstract

A review on binary metal sulfide heterojunction solar cells

Cited by 93 publications

References 132 publications

Synthesis, Characterization and Thermal Study of Divalent Germanium, Tin and Lead Triazenides for Atomic Layer Deposition

Synthesis, Characterization and Thermal Study of Divalent Germanium, Tin and Lead Triazenides for Atomic Layer Deposition

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

Synthesis, Characterization and Thermal Study of Divalent Germanium, Tin and Lead Triazenides for Atomic Layer Deposition

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