A Review on Applications of Two-Dimensional Materials in Surface-Enhanced Raman Spectroscopy

Xia, Ming

doi:10.1155/2018/4861472

Cited by 31 publications

(28 citation statements)

References 61 publications

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“…2DMX 2 have been identified as potential substrates for PIERS because of the high carrier mobility, surface-to-volume ratio, and broadband absorption. 22 No experimental proof of PIERS on 2DMX 2 has been reported, to our best knowledge.…”

Section: ■ Introductionmentioning

confidence: 96%

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS₂ Nanosheets

et al. 2020

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Two-dimensional (2D) layered transition-metal dichalcogenides (2DMX 2 ) are materials with unique optoelectronic properties, high surface-tovolume ratio, and high carrier mobility. The combination of noble metal nanoparticles (MNPs) with 2DMX 2 opens new avenues in conceiving more efficient plasmonic sensors, allowing one to optimize both electromagnetic and chemical signal enhancement. Photoinduced enhanced Raman spectroscopy (PIERS) exploits the electron migration from semiconductors to MNPs, upon UV light irradiation, to further boost the chemical enhancement in the surfaceenhanced Raman scattering (SERS) of molecules deposited on hybrid 2DMX 2 − MNP nanostructures. Here, we propose a new PIERS sensor architecture based on tungsten disulfide (WS 2 ) nanosheets produced by liquid-phase exfoliation (LPE) and functionalized with citrate-stabilized Au MPNs. Electron injection from WS 2 to AuNPs is observed when the Au@WS 2 is exposed to ultraviolet light, yielding an increase of the charge carriers' density ≈ 1.8%. The PIERS sensor performances are tested by detecting 4-mercaptobenzoic acid at a concentration of 10 μM. The overall PIERS signal enhancement is ∼10 6 , whereas the photoactivation of WS 2 yields a signal improvement of factor 4 with respect to SERS from Au@WS 2 before UV irradiation. Our sensor is of low cost, easy to fabricate, and has the potential to detect biomolecules and chemical molecules at trace levels.

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Section: ■ Introductionmentioning

confidence: 96%

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS₂ Nanosheets

et al. 2020

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“…Semiconductors and dielectrics have also been explored as alternative SERS active substrates [ 4 ]. Recently, two-dimensional (2D) materials are being investigated for next generation of SERS substrate [ 10 , 11 , 12 , 13 ],. Two-dimensional (2D) materials have large specific surface area, high oxidation resistance, high chemical inertness, high thermal conductivity, high flexibility, and good biocompatibility, which are all highly desirable features required for SERS substrates [ 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material

et al. 2021

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Increasingly, two-dimensional (2D) materials are being investigated for their potential use as surface-enhanced Raman spectroscopy (SERS) active substrates. Hexagonal Boron Nitride (hBN), a layered 2D material analogous to graphene, is mostly used as a passivation layer/dielectric substrate for nanoelectronics application. We have investigated the SERS activity of few-layer hBN film synthesized on copper foil using atmospheric pressure chemical vapor deposition. We have drop casted the probe molecules onto the hBN substrate and measured the enhancement effect due to the substrate using a 532 nm excitation laser. We observed an enhancement of ≈103 for malachite green and ≈104 for methylene blue and rhodamine 6G dyes, respectively. The observed enhancement factors are consistent with the theoretically calculated interaction energies of MB > R6G > MG with a single layer of hBN. We also observed that the enhancement is independent of the film thickness and surface morphology. We demonstrate that the hBN films are highly stable, and even for older hBN films prepared 7 months earlier, we were able to achieve similar enhancements when compared to freshly prepared films. Our detailed results and analyses demonstrate the versatility and durability of hBN films for SERS applications.

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“…Figure 3(b) shows the Raman spectrum vs. wavenumber of the same three types of samples, with the signature E 1 2g and A 1g Raman modes for MoS 2 . [142][143][144] These graphs were smoothened and normalized with respect to silicon peaks (from the substrate) that appear at 520 cm -1 . The Inset of Figure 3(b) shows the average Raman peak separations between A 1g and E 1 2g (i.e.…”

Section: Resultsmentioning

confidence: 99%

MoS₂ Nanosheets with Narrowest Excitonic Line Widths Grown by Flow-Less Direct Heating of Bulk Powders: Implications for Sensing and Detection

Hejazi

Tan

Rezapour

et al. 2021

ACS Appl. Nano Mater.

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Developing techniques for high-quality synthesis of mono and few-layered 2D materials with lowered complexity and cost continues to remain an important goal, both for accelerating fundamental research and for applications development. We present the simplest conceivable technique to synthesize micrometerscale single-crystal triangular monolayers of MoS 2 , i.e. by direct heating of bulk MoS 2 powder onto proximally-placed substrates. Room-temperature excitonic linewidth values of our samples are narrower and more uniform than those of 2D-MoS 2 obtained by most other techniques reported in literature, and comparable to those of ultraflat h-BN-capped mechanically exfoliated samples, indicative of their high quality. Feature-rich Raman spectra absent in samples grown or obtained by most other techniques, also stand out as a testament of the high quality of our samples. A contact-growth mode facilitates direct growth of crystallographically-strained circular samples, which allows us to directly compare the optoelectronic properties of flat vs. strained growth from the same growth runs. Our method allows, for the first time, to quantitatively compare the impact of strain on excitonic and Raman peak positions on identicallysynthesized 2D-MoS 2 . Strain leads to average Red-shifts of ~ 30 meV in the A-exciton position, and ~ 2 cm -1 in the E 1 2g Raman peak in these samples. Our findings open-up several new possibilities that expand 2D material research. By eliminating the need for carrier gas flow, mechanical motion or chemical reactions, our method can be either miniaturized for substantially low-cost, high-quality scientific research or potentially scaled-up for mass-production of 2D crystals for commercial purposes. Moreover, we believe this technique can also be extended to other transition metal dichalcogenides and other layered materials.

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A Review on Applications of Two-Dimensional Materials in Surface-Enhanced Raman Spectroscopy

Cited by 31 publications

References 61 publications

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS₂ Nanosheets

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS₂ Nanosheets

Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material

MoS₂ Nanosheets with Narrowest Excitonic Line Widths Grown by Flow-Less Direct Heating of Bulk Powders: Implications for Sensing and Detection

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A Review on Applications of Two-Dimensional Materials in Surface-Enhanced Raman Spectroscopy

Cited by 31 publications

References 61 publications

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS2 Nanosheets

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS2 Nanosheets

Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material

MoS2 Nanosheets with Narrowest Excitonic Line Widths Grown by Flow-Less Direct Heating of Bulk Powders: Implications for Sensing and Detection

Contact Info

Product

Resources

About

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS₂ Nanosheets

Photoinduced Enhanced Raman Spectroscopy with Hybrid Au@WS₂ Nanosheets

MoS₂ Nanosheets with Narrowest Excitonic Line Widths Grown by Flow-Less Direct Heating of Bulk Powders: Implications for Sensing and Detection