A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Clinton, Evan A.; Vadiee, Ehsan; Fabien, Chloe A. M.; Moseley, Michael William; Doolittle, W. Alan; Fischer, Alec M.; Wei, Yanfang; Xie, Haipeng; Ponce, Fernando

doi:10.1016/j.sse.2017.06.020

Cited by 20 publications

(10 citation statements)

References 47 publications

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“…In thin-film form, ZnGeN 2 has been previously deposited on several substrates by metal–organic chemical vapor deposition (MOCVD), ,− hydride vapor-phase epitaxy (HVPE), and sputtering. , ZnSn x Ge 1– x N 2 alloys have also been grown by molecular beam epitaxy (MBE) with an Sn content as low as x = 0.1 . MBE has previously been used to produce GaN and InGaN devices of the highest quality, , and demonstrating high-quality ZnGeN 2 by MBE will enable research into a new set of hybrid III-N/II-IV-N 2 devices. This work represents the first published MBE growth of ZnGeN 2 .…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Integration of ZnGeN₂ on GaN Buffers Using Molecular Beam Epitaxy

Tellekamp

Melamed

Norman

et al. 2020

Crystal Growth & Design

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Recently theorized hybrid II-IV-N2/III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N2 materials. In this work, we present heteroepitaxial ZnGeN2 grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN2 crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 °C on AlN to 500 °C on GaN buffers. Structural characterization reveals well-crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20–25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 ± 0.004 Å and c = 5.215 ± 0.005 Å determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step toward the development of hybrid ZnGeN2-GaN integrated devices.

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Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Integration of ZnGeN₂ on GaN Buffers Using Molecular Beam Epitaxy

Tellekamp

Melamed

Norman

et al. 2020

Crystal Growth & Design

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“…We addressed this effect to the VLS growth mode favoring the Ga segregation at the interface between the droplets and the substrate and we discussed a theoretical model which describes the growth dynamics under these circumstances. These findings suggest that even if the growth modes which take advantage of droplet formation (in particular MME [ 35 , 36 ] and DERI [ 22 , 23 ]) work nicely with binary compounds, they may lead to local composition fluctuations if applied to grow ternary compounds.…”

Section: Discussionmentioning

confidence: 99%

Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

et al. 2022

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We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. The results showed a marked difference in indium incorporation between the region under the droplets and between them. Based on this observation we proposed a theoretical model able to explain the results by taking into account the vapour liquid solid growth that takes place under the droplet by direct impingement of nitrogen adatoms.

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“…Compositionally graded InGaN layers have also been shown to have an effect on the internal quantum efficiency improvement in double heterojunction blue light‐emitting diodes (LEDs) . Finally, it has been shown that thick, low‐temperature growth of compositionally graded InGaN helps to reduce defect formation and facilitates growth within the miscibility gap …”

Section: Introductionmentioning

confidence: 99%

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In_xGa_1–xN Layers

Ghosh

Stanchu

Maidaniuk

et al. 2020

Physica Status Solidi (b)

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Compositionally graded InxGa1–xN‐based materials have been receiving more attention recently due to both their novel structure and intrinsic properties. However, high‐quality material with a well‐controlled and optimized grade to high In composition remains challenging to grow. Herein, the growth and characterization of continuous 2D films of compositionally graded InxGa1–xN are investigated using molecular beam epitaxy (MBE) on (0001) GaN templates at 575 °C. Each film is formed by compositionally grading the growth from GaN to InxGa1–xN and back to GaN, symmetrically, such that the bandgap and the composition of Ga follow a V‐shaped pattern. Here x has been chosen to be ≈0.20 and 0.22. These compositions are confirmed through high‐resolution X‐ray diffraction simulations. Furthermore, asymmetric reciprocal space mapping reveals complete coherence with the GaN substrate. Finally, photoluminescence is measured at low temperature to demonstrate the luminescent properties of the films.

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A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Cited by 20 publications

References 47 publications

Heteroepitaxial Integration of ZnGeN₂ on GaN Buffers Using Molecular Beam Epitaxy

Heteroepitaxial Integration of ZnGeN₂ on GaN Buffers Using Molecular Beam Epitaxy

Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In_xGa_1–xN Layers

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A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Cited by 20 publications

References 47 publications

Heteroepitaxial Integration of ZnGeN2 on GaN Buffers Using Molecular Beam Epitaxy

Heteroepitaxial Integration of ZnGeN2 on GaN Buffers Using Molecular Beam Epitaxy

Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers

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Heteroepitaxial Integration of ZnGeN₂ on GaN Buffers Using Molecular Beam Epitaxy

Heteroepitaxial Integration of ZnGeN₂ on GaN Buffers Using Molecular Beam Epitaxy

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In_xGa_1–xN Layers