A Review of the Problems of Ambrosia Beetles

Takagi, Kazuo

doi:10.5979/cha.1967.1

Cited by 2 publications

(2 citation statements)

References 48 publications

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“…The hydrogen fluoride formed in this reaction step continues to etch the capillary wall. The silicon tetrafluoride formed is then hydrolyzed back to silicon dioxide, which liberates additional hydrogen fluoride [31][32][33][34]. Thus, the etching and reformation of SiO 2 is a sustained process.…”

Section: Discussionmentioning

confidence: 99%

Nanowires for surface enlargement of narrow‐bore fused‐silica tubing

Woldegiorgis¹,

Jansson²,

Curcio³

et al. 2004

Electrophoresis

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A method for preparation of silica nanowires with dimensions of d = 10-100 nm, l = 5-500 nm, is described. The nanostructured material is an integral part of the inner surface of narrow bore fused-silica capillary tubing. The wire preparation method is based on a decomposition of 2-chloro-1,1,2-trifluoroethyl methyl ether at elevated temperature and pressure. The silica bulk material is rearranged via a sustained silica-hydrogen fluoride chemistry, and reaction mechanisms for this process are proposed. The method is suitable for preparing long lengths of tubing with the modified surface. It is our belief that the texture of the capillary wall with its increased surface area is useful for applications such as microreactions, catalysis, and high-resolution pressure and/or electrodriven open-tubular liquid chromatography.

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Section: Discussionmentioning

confidence: 99%

Nanowires for surface enlargement of narrow‐bore fused‐silica tubing

Woldegiorgis¹,

Jansson²,

Curcio³

et al. 2004

Electrophoresis

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“…18) The reason for the difficultly in bonding insulator materials is assumed to be that recombination or atomic reconstruction occurs easily on such surfaces and that these surfaces are rendered inactive immediately after being activated. [19][20][21][22][23][24] The bonding of Si=Si using an amorphous Si layer as an adhesion layer was reported, 25) and the bonding of Si=Si, SiO 2 =SiO 2 , and SiO 2 =SiN using an Fe nano-adhesion layer was also investigated. [26][27][28] In this paper, we report on a new bonding technique at room temperature for insulator materials.…”

Section: Introductionmentioning

confidence: 99%

Room temperature bonding of SiO₂ and SiO₂ by surface activated bonding method using Si ultrathin films

Utsumi

Ide

Ichiyanagi

2016

Jpn. J. Appl. Phys.

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The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m2, and the bonding strength was more than 25 MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer.

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A Review of the Problems of Ambrosia Beetles

Cited by 2 publications

References 48 publications

Nanowires for surface enlargement of narrow‐bore fused‐silica tubing

Nanowires for surface enlargement of narrow‐bore fused‐silica tubing

Room temperature bonding of SiO₂ and SiO₂ by surface activated bonding method using Si ultrathin films

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A Review of the Problems of Ambrosia Beetles

Cited by 2 publications

References 48 publications

Nanowires for surface enlargement of narrow‐bore fused‐silica tubing

Nanowires for surface enlargement of narrow‐bore fused‐silica tubing

Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films

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Product

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Room temperature bonding of SiO₂ and SiO₂ by surface activated bonding method using Si ultrathin films