A Review of Lamellar Eutectic Morphologies for Enhancing Thermoelectric and Mechanical Performance of Thermoelectric Materials

Preparation of In0.5Sn0.5Se Crystal via a Zone Melting Method and Evaluation of its Thermoelectric Properties

“…The effectiveness of eutectic structures in reducing lattice thermal conductivity has been well demonstrated in various thermoelectric materials, including typical compounds like (BiSb) 2 Te 3 , (Pb,Ge,Sn)Te, Mg 2 (Si, Ge,Sn), and Half-Heusler alloys. [37] The alternant structure of SnSe and InSe in the In 0.5 Sn 0.5 Se crystal is similar to these reported eutectic thermoelectric materials. [37][38] Due to the significant chemical fluctuation between SnSe and InSe, the thermal conductivity (𝜅) of the In 0.5 Sn 0.5 Se crystal is only 0.41 Wm −1 K −1 at 300 K, decreasing to 0.29 Wm −1 K −1 at 820 K, as shown in Figure 7b.…”

“…[37] The alternant structure of SnSe and InSe in the In 0.5 Sn 0.5 Se crystal is similar to these reported eutectic thermoelectric materials. [37][38] Due to the significant chemical fluctuation between SnSe and InSe, the thermal conductivity (𝜅) of the In 0.5 Sn 0.5 Se crystal is only 0.41 Wm −1 K −1 at 300 K, decreasing to 0.29 Wm −1 K −1 at 820 K, as shown in Figure 7b. This reduction can be attributed to the phase boundaries in the eutectic structure, which enable effective scattering of transported phonons.…”

“…Backscattered secondary electron imaging was performed on In 0.5 Sn 0.5 Se, as shown in The periodic microstructure is a common phenomenon observed in the eutectic CsI-LiCl crystal and thermoelectric materials. [37][38] Furthermore, we measured the chemical composition of three parts of the In 0.5 Sn 0.5 Se crystal, revealing similar atomic mole ratios of In:Sn:Se as 22.5:24.1:53.4, 22.17 Se crystals, as compared to reported results of binary SnSe and InSe. [15,36] the eutectic temperature of 550 °C, both SnSe and InSe components simultaneously solidify within the mixture until complete solidification.…”

Integrated First Principles and Experimental Investigation of Thermoelectric Transport in Zr/Ti Half‐Heusler‐Type High Entropy Alloys

“…[3] A good thermoelectric material should have a high power factor (PF) (S 2 /ρ) and a low κ, but due to their strong interconnections, it is difficult to optimize the properties individually. [4,5] Conventional binary and ternary Bi 2 Te 3based thermoelectric materials in different forms and morphology (eutectics, composites, nanorods, doped, thin-film) [6] under different processing routes offer reasonable performance but face significant drawbacks due to the inclusion of expensive, rare materials and stability limited to temperatures below 500 K. [7][8][9][10][11][12] Unlike these materials, Heusler, half-Heusler (hH) compounds, skutterudites, clathrates, and carbon nanotubes exhibit a tuneable electronic structure. [13][14][15] hH compounds are noted for their thermoelectric efficiency, impressive mechanical properties, and high structural stability up to 1000 K. [16] These compounds, represented by the chemical formula XYZ, where X and Y are transition or rare earth metals and Z is a main group element, follow the 18-valence electron count (VEC) rule.…”

Global Instability of Rod Eutectic Growth in Directional Solidification

“…Generally, regular eutectic mainly includes a lamellar eutectic and a rod eutectic. Most of the theories and experiments on eutectic growth are focused on the two-dimensional lamellar eutectic growth [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], while there are few reports on the three-dimensional rod eutectic [20][21][22][23][24][25][26][27][28][29][30][31][32][33]. For the growth of the three-dimensional rod eutectic, three-dimensional dimensions such as rod cross-sectional morphology (round, oval, peanut, etc.)…”