A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

Guo, Pengfei; Sarangan, Andrew; Agha, Imad

doi:10.3390/app9030530

Cited by 168 publications

(124 citation statements)

References 123 publications

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“…The diffusion behavior of this ternary system combined with the change in resistivity may be promising for phase change memory applications. 22 , 23 Therefore, we have tested the cyclability on an Al contacted unpassivated Si 0.67 Ge 0.33 NW (having a diameter of 210 nm) by exposing it to alternating heating and cooling cycles around the eutectic temperature of Al/Si, as shown in Movie M5 . Interestingly, it is possible to remove and reproduce the Si-rich segment for several cycles while maintaining the NW geometry and unreacted Si 0.67 Ge 0.33 part.…”

Section: Repetitious Cycle Propertymentioning

confidence: 99%

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Reversible Al Propagation in Si_xGe_1–x Nanowires: Implications for Electrical Contact Formation

Luong

Robin

Pauc

et al. 2020

ACS Appl. Nano Mater.

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While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid-state physics. For example, thermal diffusion is a widely known concept, used among others to inject dopants into the substitutional positions in the matrix and improve device properties. Typically, such a diffusion process will create a concentration gradient extending over increasingly large regions, without possibility to reverse this effect. On the other hand, while the bottom-up growth of semiconducting nanowires is interesting, it can still be difficult to fabricate axial heterostructures with high control. In this paper, we report a thermally assisted partially reversible thermal diffusion process occurring in the solid-state reaction between an Al metal pad and a Si x Ge 1– x alloy nanowire observed by in situ transmission electron microscopy. The thermally assisted reaction results in the creation of a Si-rich region sandwiched between the reacted Al and unreacted Si x Ge 1– x part, forming an axial Al/Si/Si x Ge 1– x heterostructure. Upon heating or (slow) cooling, the Al metal can repeatably move in and out of the Si x Ge 1– x alloy nanowire while maintaining the rodlike geometry and crystallinity, allowing to fabricate and contact nanowire heterostructures in a reversible way in a single process step, compatible with current Si-based technology. This interesting system is promising for various applications, such as phase change memories in an all crystalline system with integrated contacts as well as Si/Si x Ge 1– x /Si heterostructures for near-infrared sensing applications.

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Section: Repetitious Cycle Propertymentioning

confidence: 99%

“…A large electrical resistance difference is observed with or without the Si-rich region, comparable to phase change materials (PCM) in memory devices. 22 , 23 Additionally, the created Si/Si x Ge 1– x /Si NW heterostructure is also promising for near-infrared sensing applications. 24 − 26 …”

Section: Introductionmentioning

confidence: 99%

Reversible Al Propagation in Si_xGe_1–x Nanowires: Implications for Electrical Contact Formation

Luong

Robin

Pauc

et al. 2020

ACS Appl. Nano Mater.

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“…The bipolar resistive switching with an analog memory like behavior was observed in the developed memristive devices. Few contributors effectively orchestrated and described the ZnO and Ga-doped ZnO memristive gadgets for the neuromorphic application [2]. The outcomes of findings recommended that the Ga-doping adjusts the morphological and basic properties of ZnO slender movies.…”

Section: Discussion and Findingsmentioning

confidence: 99%

Comprehensive Evaluation of Neuromorphic Computing

2019

International Journal of Innovative Research in Electronics and

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Due to technological advancements in the field computing and networking as well, neuromorphic computing has been evolving more and more fast. Advance technologies such as neural and peripheral nerves in human body are growing explosively. If this trend goes on the computing networks congestion will increase and it would be difficult to supply large services to the needy patients. To go on with the flow without any traffic problems neuromorphic computing is the best solution. This paper aims to discuss evaluate address the methods to assess various neuromorphic computing system. Here authors are discussing resistive switching and its properties, gallium doped ZnO and behaviour of memristive resistors which are playing crucial role in neuromorphic computing. It's an attempt to address the new systems and their role as well as various issues associated with it which are contributing the computing domain.

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“…39 Further, the crystallite sizes of 14 nm and 27 nm for the face-centered cubic (fcc) and haxagonal close-packed (hcp) crystalline phases were estimated from the full width at half maximum approach on the XRD peaks of annealed GST at 170 ÂřC and 350 ÂřC, respectively. Using the local refractive indices at 1550 nm wavelength 40 as an input into the frequency-dependent electromagnetic wave simulation domain, the reflectivity of the 255 nm thick GST film was calculated to be 0.547 and 0.433 in the crystalline and amorphous phases, respectively. For the 530 nm thick GST film these numbers became 0.555 and 0.341.…”

Section: Introductionmentioning

confidence: 99%

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge₂Sb₂Te₅ via Telecom-Band Encoding

et al. 2020

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As modern computing gets continuously pushed up against the von Neumann Bottleneck -limiting the ultimate speeds for data transfer and computation-new computing methods are needed in order to bypass this issue and keep our computer's evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these protocols, we require 1 arXiv:1911.03536v1 [physics.app-ph] 7 Oct 2019 an optical memory: either a multilevel/accumulator memory, or a computational memory. Here, we propose and demonstrate a 2-dimensional 4-bit fully optical non-volatile memory using Ge 2 Sb 2 Te 5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies. We verify our design and experimental results via rigorous numerical simulations based on finite element and nucleation theory, and we successfully write and read a string of characters using direct hexadecimal encoding.

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A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

Cited by 168 publications

References 123 publications

Reversible Al Propagation in Si_xGe_1–x Nanowires: Implications for Electrical Contact Formation

Reversible Al Propagation in Si_xGe_1–x Nanowires: Implications for Electrical Contact Formation

Comprehensive Evaluation of Neuromorphic Computing

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge₂Sb₂Te₅ via Telecom-Band Encoding

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A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

Cited by 168 publications

References 123 publications

Reversible Al Propagation in SixGe1–x Nanowires: Implications for Electrical Contact Formation

Reversible Al Propagation in SixGe1–x Nanowires: Implications for Electrical Contact Formation

Comprehensive Evaluation of Neuromorphic Computing

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge2Sb2Te5 via Telecom-Band Encoding

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Product

Resources

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Reversible Al Propagation in Si_xGe_1–x Nanowires: Implications for Electrical Contact Formation

Reversible Al Propagation in Si_xGe_1–x Nanowires: Implications for Electrical Contact Formation

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge₂Sb₂Te₅ via Telecom-Band Encoding