A review of bulk semiconductor microwave control components

Mortenson, K.E.; Armstrong, A.; Borrego, J.M.; White, Joseph F.

doi:10.1109/proc.1971.8364

Cited by 19 publications

(3 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among them are plasma [21], ferromagnetic [19], ferroelectric [20], and semiconductor switches [22,25,26].…”

Section: High Power Rf Switchesmentioning

confidence: 99%

See 1 more Smart Citation

The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

Guo

2008

View full text Add to dashboard Cite

In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a systeman element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width -is still an open problem.In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level.We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter.We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch vi module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.vii ACKNOWLEDGMENTS

show abstract

“…Among them are plasma [21], ferromagnetic [19], ferroelectric [20], and semiconductor switches [22,25,26].…”

Section: High Power Rf Switchesmentioning

confidence: 99%

“…In the 1960's, the idea of waveguide semiconductor window switch based on bulk effects in the semiconductor was suggested, and several switches were developed [25,26]. The window switch comprises a high resistivity silicon wafer integrated with a set of PIN diodes.…”

Section: High Power Rf Switchesmentioning

confidence: 99%

The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

Guo

2008

View full text Add to dashboard Cite

show abstract

“…However, due to their small size, packaged PIN diodes cannot be used for switching very high power rf signals. At the end of 1960's, a rectangular waveguide switch [7,8] was developed to handle higher power rf signals than packaged PIN diodes. The window switch was tested up to 100 kW at X-band without problem.…”

Section: Introductionmentioning

confidence: 99%

Active and Passive RF Components for High-Power Systems

Tantawi¹,

Nantista²

2002

AIP Conference Proceedings

View full text Add to dashboard Cite

In recent years, R&D for pulse compression and power distribution systems for the Next Linear Collider has led to the invention of many novel rf components, some of which must handle up to 600 MW of pulsed power at X-band. These include passive waveguide components, active switch designs, and non-reciprocal devices. Among the former is a class of multi-moded, highly efficient rf components based on planar geometries with overmoded rectangular ports. Multi-moding allows us, by means of input phasing, to direct power to different locations through the same waveguide. Planar symmetry allows the height to be increased to improve power handling capacity. Features that invite breakdown, such as coupling slots, irises and H-plane septa, are avoided. This class includes hybrids, directional couplers, an eight-port superhybrid/dual-mode launcher, a mode-selective extractor, mode-preserving bends, a rectangular mode converter, and mode-mixers. We are able to utilize such rectangular waveguide components in systems incorporating low-loss, circular waveguide delay lines by means of specially designed tapers that efficiently transform multiple rectangular waveguide modes into their corresponding circular waveguide modes, specifically TE 10 and TE 20 into circular TE 11 and TE 01. These extremely compact tapers can replace well-known mode converters such as the Marié type. Another component, a reflective TE 01-TE 02 mode converter in circular waveguide, allows us to double the delay in reflective or resonant delay lines. Ideas for multi-megawatt active components, such as switches, have also been pursued. Power-handling capacity for these is increased by making them also highly overmoded. We present a design methodology for active rf magnetic components which are suitable for pulse compression systems of future X-band linear colliders. We also present an active switch based on a PIN diode array. This component comprises an array of active elements arranged so that the electric fields are reduced and the power handling capability is increased. Novel designs allow these components to operate in the low-loss circular waveguide TE 01 mode. We describe the switching elements and circuits.

show abstract

Study of Electrical Breakdown Peculiarities in High-Resistivity Compensated p-InSb

Chigogidze¹,

Khuchua²

1979

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

The phenomenon of impact ionization at T = 77 K and 4.2 K in high‐resistance compensated p‐InSb obtained by heat treatment of n‐InSb followed by a slow cooling is investigated. A deep impurity level characterized by an activation energy of Δε0 ≊ 0.12 eV is inherent to the material. It is shown that at T = 77 K in the samples with the carrier concentration p0 ⪅ 5 × 1012 cm−3 the interband breakdown occurs, while at p0 > 5 × 1012 cm−3 the interband breakdown is preceded by the impurity impact ionization. An interesting abnormal effect is found when applying a magnetic field Hα to the sample at an angle of 10° to 15° with respect to the direction of the electrical field. Some considerations are presented concerning the nature of the peculiarities observed in the electric breakdown.

show abstract

A review of bulk semiconductor microwave control components

Cited by 19 publications

References 14 publications

The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

Active and Passive RF Components for High-Power Systems

Study of Electrical Breakdown Peculiarities in High-Resistivity Compensated p-InSb

Contact Info

Product

Resources

About