A Review of 5G Front-End Systems Package Integration

Watanabe, Atom O.; Ali, Muhammad; Sayeed, Sk Yeahia Been; Tummala, Rao; Pulugurtha, Markondeya Raj

doi:10.1109/tcpmt.2020.3041412

Cited by 149 publications

(63 citation statements)

References 78 publications

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“…The 5G NR bands n77 (3300-4200 MHz), n78 (3300-3800 MHz) and n79 (4400-5000 MHz) have been planned for the 5G network [4,5]. Within this wide range spectrum, 5G applications do not require the entire sub-6 GHz bandwidth, although the required channel bandwidths for 5G systems could be 5-400 MHz [6][7][8]. For very high data rate transmission, the researchers also suggest the millimeter waves (mmWaves) as a vacant spectrum that can entirely be utilized for the 5G applications.…”

Section: Introductionmentioning

confidence: 99%

A Low-Cost Microwave Filter with Improved Passband and Stopband Characteristics Using Stub Loaded Multiple Mode Resonator for 5G Mid-Band Applications

et al. 2021

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This paper presents the design and implementation of a printed circuit microwave band-pass filter for 5G mid-band applications, using a Stub Loaded Multiple Mode Resonator (SL-MMR) technique. The objective of this article is to introduce a low-cost microstrip filter with improved passband and stopband characteristics, based on a mathematical analysis of stub loaded resonators. The filter cost is reduced by selecting the low-cost FR4 dielectric material as a substrate for the proposed filter. Based on the transmission line model of the filter, mathematical expressions are derived to predict the odd-mode and the even-mode resonant frequencies of the SL-MMR. The mathematical model also highlights the capability of controlling the position of the SL-MMR resonant frequencies, so that the 5G sub-band that extends along the range (3.7–4.2 GHz) can perfectly be covered with almost a flat passband. At the resonance frequency, a fractional bandwidth of 12.8% (500 MHz impedance bandwidth) has been obtained with a return loss of more than 18 dB and an insertion loss of less than 2.5 dB over the targeted bandwidth. Furthermore, a pair of parasitic elements is attached to the proposed filter to create an additional transmission zero in the lower stopband of the filter to enhance the suppression of the filter stopband. The measured and simulation results are well agreed, and both reveal the acceptable performance of the stopband and passband characteristics of the filter.

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Section: Introductionmentioning

confidence: 99%

A Low-Cost Microwave Filter with Improved Passband and Stopband Characteristics Using Stub Loaded Multiple Mode Resonator for 5G Mid-Band Applications

et al. 2021

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“…Besides, the high insertion loss between the antenna and the RF front-end chip will degrade the performance of the RF system. Antenna in package (AiP) and heterogeneous 3-D integration technology is a key technology of 5G [5,6]. The integration of the antenna and RF front-end chipset into the same package can reduce the feed-line loss and enhance system performance.…”

Section: Introductionmentioning

confidence: 99%

Surface-Mount Pifa Using Ball Grid Array Packaging for 5g Mmwave

Wang¹,

Liu²,

Zhang³

et al. 2021

PIER Letters

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In this letter, a surface-mount planar inverted-F antenna (PIFA) is proposed for the 5G mmWave system using ball grid array packaging (BGA). To meet the requirement of cost-effectiveness, the proposed antenna element is designed on a single FR4 layer to achieve low cost. To achieve a compact size, the BGA packaging is used on the proposed antenna element. Finally, the size of the antenna prototype is only 4.5 mm × 4.5 mm × 1.3 mm. Besides, the surface-mount feature allows the proposed antenna to be integrated with other devices in the same system package. The simulation and measurement results are discussed in detail. The measurement results show that the impedance bandwidth of −10 dB is 15.3% (24.7-29.6 GHz), and the peak gain is 5.85 dBi at 28 GHz. The proposed PIFA can be used in the 5G NR bands N257 (26.5-29.5 GHz), .

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“…The antenna can be placed very close to the RF front-end chipset to reduce insertion loss and improve system performance. Compared with the wire-bonding interconnection technique, the surface-mount devices using the flip-chip interconnection technology can reduce the parasitic effect and obtain better electrical performance by using the smaller solder balls, bumps, or pillars [14][15][16]. Many materials can be applied to AiP technology.…”

Section: Introductionmentioning

confidence: 99%