2015 IEEE International Wireless Symposium (IWS 2015) 2015
DOI: 10.1109/ieee-iws.2015.7164642
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A review and design of the on-chip rectifiers for RF energy harvesting

Abstract: This paper presents an overview of the CMOS onchip rectifiers for RF energy harvesting in the RFID, internet of things, or wearable device applications. The pros and cons of different RF to DC rectifier topologies are investigated, compared, and summarized. All the topologies are designed and optimized in a 65nm CMOS process, with the input power range from -10dBm to 4dBm and the load resistor range from 10kΩ to 1MΩ. The simulated results show that the cross-connected (CC) topology exhibits the highest achieva… Show more

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Cited by 30 publications
(12 citation statements)
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“…Although this topology suffers from some loss caused by the leakage current, but in terms of overall performance, this topology is considered the best in terms of PCE if the input power is low. Because of its higher sensitivity compared with others, this topology is widely used in previously reported works …”
Section: Characterization and Analysis Of Rectifier Circuitsmentioning
confidence: 99%
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“…Although this topology suffers from some loss caused by the leakage current, but in terms of overall performance, this topology is considered the best in terms of PCE if the input power is low. Because of its higher sensitivity compared with others, this topology is widely used in previously reported works …”
Section: Characterization and Analysis Of Rectifier Circuitsmentioning
confidence: 99%
“…State‐of‐the‐art CMOS rectifiers for 915 MHz RFID show an output load range from 10 kΩ to 5.45 MΩ. The DC output power ranges from 0.2 to 50 μW whereas the reference voltage are between 0.53 and 2.75 V . For 5.8 GHz, only the work of Radiom et al can be referred to with an output load of 5.45 MΩ.…”
Section: Ultrasmall Antenna To Be Combined With the Rectifiermentioning
confidence: 99%
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