2020 IEEE Energy Conversion Congress and Exposition (ECCE) 2020
DOI: 10.1109/ecce44975.2020.9236130
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A Resonant Gate Driver with Variable Gain and a Capacitively Decoupled High-Side GaN-FET

Abstract: Here we describe a gate-driver with resonant action that minimizes gating loss at high switching frequencies (10-20 MHz) while facilitating variable voltage gain that can exceed the supply rails. The gate voltage swing can be controlled with minimal duty cycle constraints, making this driver capable of meeting the diverse drive requirements of different switch technologies and converter topologies. A prototype uses two small N-channel gallium nitride (GaN) transistors within the drive structure, significantly … Show more

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Cited by 3 publications
(3 citation statements)
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“…One essential, yet often trivialized aspect of power converter design is the power delivery scheme for the gatedrivers contained therein. While this circuitry is expected to leave a minimal footprint, improvements in this area have not kept pace with the rapidly developing power converter landscape in which higher order topologies eschew simplicity for dramatic performance improvements [1]- [3]; advanced control schemes and assistive circuitry minimize parasitic effects [4]- [6]; and advanced semiconductor devices, such as Gallium Nitride, consume significantly less area for the same switch conductivity while simultaneously boasting reduced parasitics. Subsequently, switching frequencies have been increased, resulting in the ordinarily dominant volume of passive components reducing considerably [7], [8].…”
Section: Motivation and Backgroundmentioning
confidence: 99%
“…One essential, yet often trivialized aspect of power converter design is the power delivery scheme for the gatedrivers contained therein. While this circuitry is expected to leave a minimal footprint, improvements in this area have not kept pace with the rapidly developing power converter landscape in which higher order topologies eschew simplicity for dramatic performance improvements [1]- [3]; advanced control schemes and assistive circuitry minimize parasitic effects [4]- [6]; and advanced semiconductor devices, such as Gallium Nitride, consume significantly less area for the same switch conductivity while simultaneously boasting reduced parasitics. Subsequently, switching frequencies have been increased, resulting in the ordinarily dominant volume of passive components reducing considerably [7], [8].…”
Section: Motivation and Backgroundmentioning
confidence: 99%
“…Several methods have been proposed to address this loss mechanism using resonant and soft-charging techniques within the gatedriver itself (e.g. [12]). Reverse recovery and finite transition time conduction losses can be avoided through use of devices with no intrinsic body diode (e.g.…”
Section: A Switching Lossmentioning
confidence: 99%
“…[2]- [5]). As hybridized switched-capacitor (HSC) power converters gain popularity, a significant body of work has emerged which describes SSL mitigation in a variety of topologies, with additional work applying zero-voltage/current switching (ZVS/ZCS) [4], [5], [8], [12]- [14] and advanced gate-drive structures [15]- [19] for further improved switching performance. Previous work has proposed general analytical methods by which switched-capacitor topologies can be assessed as to their eligibility for hybridization, with com- Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org.…”
Section: Introductionmentioning
confidence: 99%