A Record Low Threshold InGaAs/GaAlAs Vertical-Cavity Surface-Emitting Laser

Abstract

An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70μA was achieved by a 5μmϕ core device. The proposed structure provides both strong electrical and optical confinements.