A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Grasser, T.; Feil, M.; Waschneck, K.; Reisinger, H.; Berens, J.; Waldhoer, D.; Vasilev, A.; Waltl, M.; Aichinger, T.; Bockstedte, M.; Gustin, W.; Pobegen, G.

doi:10.1109/irps48228.2024.10529465

2024 IEEE International Reliability Physics Symposium (IRPS) 2024

DOI: 10.1109/irps48228.2024.10529465

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

T. Grasser,

M. Feil,

K. Waschneck

et al.

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2024

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Cited by 1 publication

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Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

Grasser,

Feil,

Waschneck

et al. 2024

IEEE Trans. Electron Devices

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It has recently been observed that bipolar switching between accumulation and inversion can result in an unexpected threshold voltage drift in SiC MOSFETs. This phenomenon has been termed gate switching instability (GSI) and is characterized by power-law time exponents close to unity, significantly larger than what is typically observed for ordinary bias temperature instability (BTI) during static or unipolar switching stress. Since the bias, frequency, and temperature dependence of GSI are the same as what is seen in charge pumping (CP) experiments, we stipulate that recombination events at the interface lead to recombination-enhanced defect reactions (REDRs), which can eventually lead to degradation. Based on these observations, we develop a comprehensive physical model for GSI, discuss its features, derive a closed form analytical solution, and finally validate the model against detailed experimental data.

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Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

Grasser,

Feil,

Waschneck

et al. 2024

IEEE Trans. Electron Devices

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Cited by 1 publication

References 26 publications

Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

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