SDD2P (Symbolically Defined Devices, two ports) in the software ADS is used for DC modeling of Al 0.27 Ga 0.73 N/AlN/GaN HEMT to represent nonlinear relationship of IDS versus VGS and VDS. S2PMDIF (Multi-Dimensional 2-Port S-parameter File) in the software ADS is used for AC modeling of Al 0.27 Ga 0.73 N/AlN/GaN HEMT to represent relationship of Sparameters versus VGS and VDS. And then the AC and DC models in ADS were put together to form a new model which represents DC and AC performance of Al 0.27 Ga 0.73 N/AlN/GaN HEMT, which schematic is in Figure 4. A symbol "model_AC_DC" of the model transfer from its schematic is shown in Figure 5 and is applied for the circuit design. Where 3(T1) and 4(T2) are AC terminals of model; 1(Vgs) and 2(Vds) are DC terminals of model.
RESULTSThe comparison of output characteristic IDS between DC model and measurement data show that both is well coincided in Figure 6. It means that the DC model's precision is fairly high. Its precision is a lot higher than one of the model with look-up table approach for non-quasi-static modeling of GaN HEMT in Ref. [11].In order to describe the AC output to device, four S parameters of S11, S12, S21, and S22 are compared between the simulation and measurement data with the multibiases of drain voltage VD 5 15 V, gate voltage VGS from 25 to 0 V, step of 1 V, and frequency from 1 to 49 GHz, step of 1 GHz as shown in Figure 7, respectively. The blue solid lines present the measurement data and the red squares show the simulation data. It can be seen that the simulation results are well matched with the measurement data, which means that the AC model's accuracy is quite high. Reference 11] gives out S parameters of the model of look-up table approach for non-quasi-static modeling of GaN HEMTs with single bias. Its precision is lower than one of the proposed model in this article.
CONCLUSIONA novel approach for modeling of millimetre-wave Al 0.27 Ga 0.73 N/AlN/GaN HEMT with DC and AC performances in multibiases has been presented successfully. It has been embedded in ADS, which can be used to designed RF circuit. The comparison between the measurement and simulation results has show that the accuracy of the model developed is extremely high in band of millimeter wave, which is difficult for conventional approach of modeling of Al 0.27 Ga 0.73 ABSTRACT: The two-dimensional Helmholtz equation with Dirichlet's boundary conditions is rigorously solved for multiple arbitrary profiled cylinders. This describes the wave diffraction of E-polarized electromagnetic field. The developed algorithm is used for calculation of the radar cross-section of an infinitely long double-layered array. In this article, we focus on the resonance response of the structure caused by excitation of the high Q-factor oscillations.ABSTRACT: The aim of this article is to construct broadband ultra thin absorbers using metamaterials in microwave frequencies (C-band) for lower band surveillance and air defense applications. The frequencies of absorptions have been brought closer by par...