A Raman spectroscopy study of the effect of thermal treatment on structural and photoluminescence properties of CVD diamond films

Dychalska, Anna; Fabisiak, K.; Paprocki, K.; Makowiecki, Jarosław; Iskaliyeva, Aizhan; Szybowicz, Mirosław

doi:10.1016/j.matdes.2016.09.092

Cited by 18 publications

(7 citation statements)

References 24 publications

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“…The spectrum background, which was related to the amorphous carbon that caused by heavy ion bombardment at high RF power on the diamond film, however, all appeared weaker than that of samples etched at low RF power in our previous works [26]. Moreover, a bulge in the position shown from 1430 cm -1 to 1580 cm -1 of the spectra could be probably attributed to the Raman active vibrational mode of sp 2 hybridized non-crystalline carbon on the etched surface [27,28]. As for the spectra of the diamond sample etched in O2+CF4 (PCD10), the bulge appeared more obvious, because of the accumulation of C on the surface and the contemporaneous slow etching rate [6,24].…”

Section: Surface Morphologymentioning

confidence: 63%

Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching

et al. 2019

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Section: Surface Morphologymentioning

confidence: 63%

Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching

et al. 2019

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“…Figure 3C shows the PL for the four samples in this study. Since all the films were grown with the same conditions, the PL effect due to temperature [14] can be discarded. Our data shows that a thicker layer of HfO 2 results in higher PL.…”

Section: Analysis and Resultsmentioning

confidence: 99%

Photoluminescence in Raman Scattering: Effects of HfO2 Template Layer on Ultrananocrystalline Diamond (UNCD) Films Grown on Stainless Steel Substrates

Obaldía¹,

Tirado

Alcantar

et al. 2018

KEG

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The growth of polycrystalline diamond films can play an important role in industry if they can be grown on industrially used materials like aluminum (Al) or stainless steel (SS). A critical issue related to the growth of ultrananocrystalline diamond (UNCD) thin films on metals like SS, in a Hydrogen rich environment like the one present during growth of UNCD films, is the diffusion of Hydrogen (H) into the SS substrate, as it has been observed in prior research, which results in hydride formation in the SS that induce brittleness in the SS substrate. Several interface layers have been proposed described to avoid the H diffusion into the SS. However, HfO 2 has not been explored. The work reported here was focused on investigating the growth of UNCD films on commercially available SS substrates by using an interface layer of HfO 2 , which was found to be a good diffusion barrier for H to inhibit penetration into the SS substrate. The samples where characterized with SEM and Raman spectroscopy. A photoluminescence (PL) effect, observed in the Raman scattering analysis, is present in all the samples. The PL effect may be due to the interaction of the UNCD / HfO 2 interface. and the SS substrate rather than UNCD film alone. The novel result from the experiments described here, is the fact that it is possible to grow UNCD films on unseeded HfO2 layers on SS substrates. Keywords: ESTEC Conference Proceedings ResumenEl crecimiento de las películas de diamante policristalino podrían desempeñar un papel importante en la industria si pudiera crecer en materiales de uso industrial como aluminio (Al) o acero inoxidable (SS). Los problemas específicos con el crecimiento de películas delgadas de diamante ultrananocristalino (UNCD) en un ambiente rico en hidrógeno, discutido previamente, se debe a la alta difusión de Hydrógeno (H) en el SS y la formación de hidruros que inducen fragilidad en el SS. Se han propuesto introducir diferentes capas sobre la superficie del SS, para evitar la difusión de H en SS. Sin embargo, HfO 2 no ha sido explorado. Este trabajo se enfoca en investigar el crecimiento de láminas delgadas de UNCD sobre la superficie de sustratos comerciales de SS, creciendo una lámina ultradelgada de HfO 2 que prueba ser una buena barrera pare evitar la difusión de H que inhibe la penetración en el substrato. Las muestras se caracterizaron por espectroscopia SEM y Raman. Un efecto de fotoluminiscencia (PL) fue observado en todas las muestras. La hipótesis que se propone es que el efecto PL se debe principalmente a la interacción entre la lámina de HfO 2 y el sustrato SS en lugar de la lámina de UNCD. Un resultado sorprendente de los experimentos discutidos aquí, es el hecho de que es posible crecer láminas de UNCD sobre sustratos de HfO 2 /SS sin previa inserción de semillas de diamante nanocrystallino.Palabras claves: Diamante nano-cristalino (UNCD), foto fluorescencia, acero inoxidable, lámina, dióxido de hafnio.

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“…The most effective method to characterize the structural quality of both polycrystalline diamond layers and diamond monocrystals is the commonly used Raman spectroscopy [9]. However, this method does not provide information on the nature of these defects.…”

Section: Introductionmentioning

confidence: 99%

Orientation Dependence of Cathodoluminescence and Photoluminescence Spectroscopy of Defects in Chemical-Vapor-Deposited Diamond Microcrystal

et al. 2020

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Point defects, impurities, and defect–impurity complexes in diamond microcrystals were studied with the cathodoluminescence (CL) spectroscopy in the scanning electron microscope, photoluminescence (PL), and Raman spectroscopy (RS). Such defects can influence the directions that microcrystals are grown. Micro-diamonds were obtained by a hot-filament chemical vapor deposition (HF CVD) technique from the methane–hydrogen gas mixture. The CL spectra of diamond microcrystals taken from (100) and (111) crystallographic planes were compared to the CL spectrum of a (100) oriented Element Six diamond monocrystal. The following color centers were identified: 2.52, 2.156, 2.055 eV attributed to a nitrogen–vacancy complex and a violet-emitting center (A-band) observed at 2.82 eV associated with dislocation line defects, whose atomic structure is still under discussion. The Raman studies showed that the planes (111) are more defective in comparison to (100) planes. What is reflected in the CL spectra as (111) shows a strong band in the UV region (2.815 eV) which is not observed in the case of the (100) plane.

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A Raman spectroscopy study of the effect of thermal treatment on structural and photoluminescence properties of CVD diamond films

Cited by 18 publications

References 24 publications

Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching

Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching

Photoluminescence in Raman Scattering: Effects of HfO2 Template Layer on Ultrananocrystalline Diamond (UNCD) Films Grown on Stainless Steel Substrates

Orientation Dependence of Cathodoluminescence and Photoluminescence Spectroscopy of Defects in Chemical-Vapor-Deposited Diamond Microcrystal

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