A Quasi-Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC Devices

Wu, Xuanlyu; Zaman, Haider; Wu, Panpan; Jia, Rongyou; Zhao, Xin; Wu, Xiaohua

doi:10.1109/access.2020.3032590

Cited by 8 publications

(15 citation statements)

References 19 publications

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“…Multilevel gate drivers are effective to mitigate crosstalk (Li et al, 2020b;Wu et al, 2020) and offer reduced energy losses and increased safety and reliability (Zhao et al, 2019;Li et al, 2020b). To introduce additional levels in gate voltage, multilevel gate drivers employ either auxiliary circuits or an active driving approach.…”

Section: Multilevel Gate Driversmentioning

confidence: 99%

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

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Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have investigated the design, structure and benefits of module packages. However, a comprehensive and in-depth overview of the discrete package is lacking. Discrete package has the advantages of flexibility, scalability and reduced cost; however, challenges of severe switching oscillations and limited current capacity are associated with it. This review encompasses the switching oscillations and limited current capacity issues of discrete devices. Switching oscillations are categorized in terms of voltage. The underlying oscillation mechanisms are explored in detail. For the current imbalance, the types, root causes and adverse effects in parallel-connected discrete devices application are reviewed. Besides, the most recent techniques to extract stray parameters are also explored. Finally, state-of-the-art methods to mitigate the switching oscillations and the current imbalance are summarized and evaluated. The performance improvement strategies discussed in this paper can assist researchers to better use the discrete package and can stimulate them to come up with new solutions.

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Section: Multilevel Gate Driversmentioning

confidence: 99%

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

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“…For the third category, negative turn-off voltage is another effective method to suppress crosstalk [11]- [13], [21]- [22], [24]- [26]. The gate driver with a negative power supply is the simplest way [21]- [22].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the level shifter is usually used with additional negative crosstalk suppression circuits. A multi-level gate driver with both negative and zero-gate voltage is proposed which is achieved by an auxiliary MOSFET branch between the gate and source nodes of SiC MOSFET [25]- [26]. Negative gatesource voltage can reduce the positive crosstalk to prevent spurious turn-on.…”

Section: Introductionmentioning

confidence: 99%

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A Transistor-Based Assist Gate Driver of SiC MOSFET for Crosstalk Suppression in a Phase-Leg Configuration

Xu,

Yang,

et al. 2023

IEEE Access

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Crosstalk in a phase-leg configuration significantly limits the high switching performance of silicon carbide (SiC) MOSFETs and results in additional switching loss, self-excited oscillation and even parasitic conduction. To give full play to the fast switching potential of SiC MOSFET, this paper proposes a negative voltage transistor-based assist gate driver (NVTAGD) to suppress the voltage spike caused by the communication. First, a simple circuit composed of capacitor, resistor and diode is applied to establish a negative gate-source voltage level. Then, two auxiliary transistors cooperate with capacitors and diodes to actively suppress the positive and negative gate-source voltage spike. The auxiliary transistor can flexibly adjust its working mode according to the operation states of the circuit without additional control signals. Finally, parameter design criteria of main components are also given to meet different operating conditions. A double-pulse experimental setup based on SCT3022AL SiC MOSFET is established to illustrate the effectiveness of the proposed method. The proposed NVTAGD generates a negative voltage of -2.3 V for the synchronous freewheeling device. And the positive and negative crosstalk voltage spike decreases by 52.6% and 44.9% respectively. Both positive and negative crosstalk voltages are limited by the safe range. A series of experimental results illustrate that the proposed method not only suppresses the crosstalk voltage but also increases the reliability of the devices.INDEX TERMS Crosstalk suppression, silicon carbide (SiC) MOSFET, assist gate driver, phase-leg configuration, auxiliary transistors

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“…The most studied solution is to add an assistant circuit to the conventional driver, which is recommended by several SiC power device manufacturers [21,24,25]. In [26], the added assistant circuit can change the negative driver voltage of the OFF-state switch, which makes the spurious pulse within the safety allowance. However, it may occur that the spurious pulse is so high that shifting the negative driver voltage cannot guarantee that the spurious pulse is within the safety allowance.…”

Section: Introductionmentioning

confidence: 99%

A New Gate Driver for Suppressing Crosstalk of SiC MOSFET

et al. 2022

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High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) has serious crosstalk issues. During the turn-ON transition and turn-OFF transition of the active switch in a phase-leg configuration, the voltage drops across the common-source inductor and the displacement current of the gate-drain capacitor of the OFF-state switch induce a spurious pulse on its gate-source voltage. This paper proposes a new gate driver using two Bipolar Junction Transistors (BJTs) and one diode to connect the gate terminal of SiC MOSFET and the negative driver voltage, which provides a low impedance path to bypass the displacement current of the gate-drain capacitor when crosstalk issues occur. The simulation results prove the proposed driver is valid on suppressing the crosstalk issue. The comparisons between the prior drivers and the proposed driver show the superiority of the proposed driver. Finally, the proposed gate driver is successfully implemented and experimentally verified on a 1.1 kW synchronous buck prototype.

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A Quasi-Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC Devices

Cited by 8 publications

References 19 publications

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

A Transistor-Based Assist Gate Driver of SiC MOSFET for Crosstalk Suppression in a Phase-Leg Configuration

A New Gate Driver for Suppressing Crosstalk of SiC MOSFET

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